Nitride Semiconductor Light Emitting Element With Stable Emission Peak Ratio
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Solution Overview
Problem
Nitride semiconductor light emitting elements with varying well layers struggle to achieve a stable ratio of emission peak intensity, leading to inefficient ultraviolet penetration and curing of materials, especially when well layers with different band gap energies are stacked in a specific order.
Innovation Solution
A nitride semiconductor light emitting element structure with a first well layer and second well layers of larger band gap energy, alternately stacked with barrier layers, where the second well layers are positioned at the outermost sides and the first well layer is closer to the n-type semiconductor layer, ensuring stable electron confinement and emission peak intensity ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If well layers of different emission wavelengths are stacked in order of wavelength, then multiple emission peaks can be obtained, but the ratio of emission peak intensity becomes unstable
Solution Approach 1:
The active layer is segmented into multiple well layers with different compositions and thicknesses, where each well layer contributes to a specific emission peak. The first well layer (InGaN with 5-15% In) produces a first emission peak, while the second well layer (InGaN with 20-30% In) produces a second emission peak at a longer wavelength, achieving multiple emission peaks with stable intensity ratio
Solution Approach 2:
Different regions of the active layer are assigned different local qualities through varying the In composition and thickness of well layers. The first well layer has specific composition and thickness optimized for one emission wavelength, while the second well layer has different composition and thickness optimized for another wavelength, allowing each region to contribute optimally to its designated emission peak
2Illumination intensity
If a well layer of longer wavelength emission is disposed closer to the p-type nitride semiconductor layer side, then emission from the well layer of longer wavelength is facilitated, but emission from the well layer of shorter wavelength may not occur
Solution Approach 1:
Instead of placing the well layer with larger band gap energy (shorter wavelength) closer to the p-type layer as conventionally done, the invention inverts this arrangement by placing the well layer with smaller band gap energy (longer wavelength, second well layer) closer to the p-type nitride semiconductor layer. This inversion enables both well layers to contribute to emission, achieving stable multi-peak emission spectrum
3Ease of manufacture
If a well layer of smaller band gap energy is disposed closer to the n-type semiconductor layer side, then the structure can be formed, but the electron confinement effect is degraded and luminous efficiency decreases
Solution Approach 1:
The invention optimizes the composition parameters of the well layers, specifically controlling the In content to be 5-15% for the first well layer and 20-30% for the second well layer. These parameter ranges ensure adequate electron confinement while maintaining the desired emission characteristics, achieving both manufacturability and high luminous efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration stabilizes the emission peak intensity ratio and enhances luminous efficiency, allowing for deeper penetration of ultraviolet light into materials, making it suitable for curing applications.
Implementation Method 1
a nitride semiconductor light emitting element comprises an active layer disposed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, the active layer comprises a first well layer, second well layers interposing the first well layer and disposed at outermost sides among the well layers, and barrier layers disposed between each of the well layers
Implementation Method 2
the second well layer comprise a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer, and the nitride semiconductor light emitting element having peaks in the emission spectrum respectively corresponding to the first well layer and the second well layer
Data Source
AI summary
Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting 1 comprises an active layer 12 disposed between an n-type nitride semiconductor layer 11 and a p-type nitride semiconductor layer 13. The active layer 12 comprises a first well layer 14, second well layers 15 interposing the first well layer 14 and disposed at outermost sides among the well layers, and barrier layers 16, 17 disposed between each of the well layers. The second well layer 15 comprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer 14, and the nitride semiconductor light emitting element 1 has peaks in the emission spectrum respectively corresponding to the first well layer 14 and the second well layer 15.