Hole Transport Region Composition for Better Hole Injection

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Solution Overview

Problem

Conventional light-emitting devices face inefficiencies in hole injection and reduced lifespan due to the use of organic compounds, which can lead to deterioration and decreased performance.

Innovation Solution

Incorporating a Group 11 metal chalcogenide compound, such as Cu2S, CuS, Cu2Se, or CuSe, in the hole transport region, excluding oxygen from the chalcogenide element, to enhance hole injection control and device efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If organic compounds are used in the hole transport region, then the device can be manufactured with conventional materials, but the hole injection efficiency decreases and device lifespan is reduced

Engineering Contradiction:
Improveease of manufactureVSAvoiddevice lifespan
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the chemical composition parameter of the hole transport region from organic compounds to Group 11 metal chalcogenide compounds (such as Cu2S, CuS, Cu2Se, CuSe). This material substitution fundamentally alters the electrical and chemical properties of the layer, enabling superior hole injection efficiency and extended device lifespan while maintaining compatibility with conventional manufacturing processes

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material strategy by using specific Group 11 metal chalcogenide compounds that combine metal elements from Group 11 (Cu, Ag, Au) with chalcogen elements (S, Se, Te). These composite materials exhibit synergistic properties that simultaneously improve hole transport capability, device stability, and operational lifetime compared to conventional organic materials

Inventive Principle:
Principle #40Composite materials

2Device complexity

If conventional organic compounds are used in the hole transport region, then the device structure remains simple, but the efficiency and performance deteriorate over time

Engineering Contradiction:
Improvedevice structureVSAvoiddevice efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent modifies the material composition parameter of the hole transport region by introducing Group 11 metal chalcogenide compounds. This change enhances the electrical conductivity and hole mobility of the layer, resulting in improved device efficiency and sustained performance without complicating the overall device structure or requiring additional layers

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If organic compounds are used in the hole transport region, then the manufacturing process remains conventional, but hole injection control is poor and deterioration occurs

Engineering Contradiction:
Improvemanufacturing processVSAvoidhole injection control
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent changes the material parameter from organic compounds to Group 11 metal chalcogenide compounds, which possess inherent properties that enable precise control over hole injection. The unique electronic structure and charge transport characteristics of these metal chalcogenide materials allow for optimized hole injection efficiency and reduced deterioration, while the manufacturing process remains compatible with conventional techniques

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11917905B2Light-emitting device including hole transport region containing group 11 metal chalcogenide compound
Publication Date: 2024.02.27 SAMSUNG DISPLAY CO LTD
  • US11917905B2 patent drawing
  • US11917905B2 patent drawing
  • US11917905B2 patent drawing

AI summary

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes i) a hole transport region between the first electrode and the emission layer, and ii) an electron transport region between the emission layer and the second electrode, and the hole transport region includes a Group 11 metal chalcogenide compound including a Group 11 metal and a chalcogenide element with the proviso that oxygen is excluded from the chalcogenide element.