Honeycomb Lower Electrode Support Structure to Prevent Contact

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

As semiconductor devices become more highly integrated, the smaller size of capacitor components poses challenges in preventing contact between lower electrodes, which can lead to structural instability and defects due to stress and bending.

Innovation Solution

A semiconductor device design featuring a substrate with lower electrodes arranged in a honeycomb structure and supported by a network of supporters with strategically placed supporter holes, which expose portions of the electrodes and have convex and concave sidewalls to distribute stress and prevent contact between adjacent electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If lower electrodes are arranged in a honeycomb structure with smaller size for high integration, then device integration density is improved, but structural stability deteriorates due to stress and bending causing contact between electrodes

Engineering Contradiction:
Improveintegration densityVSAvoidstructural stability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

A supporter structure is introduced as an intermediary element between adjacent lower electrodes. The supporter includes supporter holes that expose portions of the lower electrodes and prevent them from contacting each other during stress or bending. This intermediary structure resolves the contradiction by maintaining structural stability while allowing the electrodes to remain in a densely packed honeycomb arrangement.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Volume of moving object

If the size of capacitor components is reduced for high integration, then device density is improved, but the risk of electrode contact and structural defects increases

Engineering Contradiction:
Improvecapacitor sizeVSAvoiddefect rate
Core Design Contradiction:
Volume of moving objectVSManufacturing precision

Solution Approach 1:

The supporter structure is segmented into multiple supporter holes distributed across the capacitor component. Each supporter hole locally exposes and protects a specific portion of the lower electrode, preventing contact at multiple potential defect points simultaneously. This segmentation approach allows small capacitor sizes while maintaining manufacturing precision by addressing potential contact issues at multiple locations.

Inventive Principle:
Principle #1Segmentation

3Productivity

If lower electrodes are made smaller and closer together for high integration, then device capacity increases, but stress distribution becomes concentrated leading to electrode contact

Engineering Contradiction:
Improvedevice capacityVSAvoidstress distribution
Core Design Contradiction:
ProductivityVSStress or pressure

Solution Approach 1:

The supporter structure implements local quality by creating specific zones (supporter holes) with different properties from the surrounding structure. The supporter holes expose lower electrodes in a controlled manner, creating localized stress relief zones that prevent stress concentration between closely spaced electrodes. This allows higher device capacity through closer electrode spacing while maintaining proper stress distribution.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20240038830A1Semiconductor device
Publication Date: 2024.02.01 SAMSUNG ELECTRONICS CO LTD
  • US20240038830A1 patent drawing
  • US20240038830A1 patent drawing
  • US20240038830A1 patent drawing

AI summary

The semiconductor device is provided. The semiconductor device comprises a substrate; a plurality of lower electrodes on the substrate and arranged in a honeycomb structure; and a supporter connecting the plurality of lower electrodes to each other, wherein the supporter has a plurality of supporter holes defined therein, wherein each of the plurality of supporter holes exposes at least a portion of each of the plurality of lower electrodes, wherein the supporter includes: a plurality of first extensions extending in a first direction; and a plurality of second extensions extending in a second direction so as to intersect the plurality of first extensions, wherein each of the plurality of first extensions has first and second sidewalls, wherein each of the plurality of second extensions has third and fourth sidewalls, wherein each of the first to fourth sidewalls includes a convex portion and a concave portion.