Housing-Free Diode Assembly With Metallized Heat-Dissipating Contacts
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Solution Overview
Problem
Existing diode arrangements for reverse polarity protection are limited in their ability to dissipate heat efficiently and protect semiconductor diodes from environmental influences without the need for a thermally insulating housing, while also being cost-effective and easy to handle.
Innovation Solution
A diode arrangement featuring a semiconductor diode with a p/n junction, where the top and bottom surfaces are extensively metallized for full-surface contact and heat dissipation, and connectors are designed for cohesive bonding to enhance electrical connectivity and mechanical stability, allowing for reliable operation without a housing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a thermally insulating housing is used to protect the semiconductor diode, then protection from environmental influences is improved, but heat dissipation is worsened
Solution Approach 1:
The patent removes the housing entirely from the diode structure, creating a housing-free design where the semiconductor diode is exposed directly to the environment. This extraction eliminates the thermal insulation barrier while the metallized surfaces provide sufficient environmental protection for the intended application range.
Solution Approach 2:
The patent applies extensive metallization (at least 80% surface coverage) on the semiconductor diode surfaces. This metallized layer provides both environmental protection (oxidation resistance, contamination barrier) and thermal management (heat dissipation pathway) locally at the diode surface, replacing the need for a housing.
2Ease of operation
If the semiconductor diode is designed as a discrete component without housing, then ease of handling and processing is improved, but protection from environmental influences is worsened
Solution Approach 1:
The patent applies extensive metallization (at least 80% surface coverage) on the semiconductor diode surfaces. This metallized layer provides both environmental protection (oxidation resistance, contamination barrier) and thermal management (heat dissipation pathway) locally at the diode surface, replacing the need for a housing.
Solution Approach 2:
The metallized surfaces serve multiple functions simultaneously: electrical contact, environmental protection (oxidation and contamination barrier), and heat dissipation. This multi-functionality allows the housing-less design to maintain protection capabilities while improving ease of handling.
3Ease of operation
If the connecting piece protrudes significantly from the contact surfaces, then ease of connection is improved, but device flatness and compactness are worsened
Solution Approach 1:
The patent allows minimal protrusion (up to 1.5-2.5 mm) of the connecting piece from the contact surface plane. This partial protrusion provides sufficient connection capability for most applications while maintaining overall device flatness and compactness, representing an optimized compromise rather than full protrusion.
Solution Approach 2:
The patent defines specific parameter ranges for the connecting piece protrusion (1.5-2.5 mm maximum) to optimize the balance between connection ease and device compactness. This parameter control ensures the connector is easy to handle while maintaining a flat, compact overall structure suitable for modern electronic assemblies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diode arrangement provides effective heat dissipation and protection from environmental influences, enabling reliable operation at currents above 1 ampere and improving the yield and reliability of semiconductor diodes by allowing for parallel connections and easy handling.
Implementation Method 1
Another advantage is that the full-surface metallization reliably protects the semiconductor diode from environmental influences such as light and improves heat dissipation
Implementation Method 2
The semiconductor diode has a p-doped top side and an n-doped bottom side or an n-doped top side and a p-doped bottom side
Data Source
Figure 1a~1c
Figure 2a~4
Figure 5a1~5a3
AI summary
comprising a diode arrangement (DA), a semiconductor diode (D1) with a p/n junction, wherein the semiconductor diode has a top (OS) and a bottom (US), and a first electrical contact (K1) is formed on the top (OS) and a second electrical contact (K2) on the bottom, the semiconductor diode is formed as a planar die without a housing and has a planar top and a planar bottom, and the metallized top forms the first contact (K1) and the metallized bottom forms the second contact (K2) of the semiconductor diode, a first flat metallic connector (VB1) with a first contact surface (KF1) and a second contact surface (KF2) spaced apart from the first by a connecting piece (VBS), and a second flat metallic connector (VB2) with a first contact surface (KF1) and a second contact surface (KF2) spaced apart from the first by a connecting piece (VBS),and the metallized top surface (OS) is bonded to one of the two contact surfaces (KF1, KF2) of the first metallic connector (VB1), and the metallized bottom surface (US) is bonded to one of the two contact surfaces (KF1, KF2) of the second metallic connector.