High-Voltage Integrated Metal Capacitor Vertical Dielectric Stacking
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Solution Overview
Problem
Conventional integrated circuit manufacturing processes are limited in producing capacitors with high enough breakdown voltage to handle large voltage differences across isolated domains, such as in automotive applications, and face physical space constraints in achieving the required breakdown voltage.
Innovation Solution
The integration of an additional dielectric layer and a top metal plate in the capacitor structure, allowing for increased dielectric thickness beyond conventional limits, forming a high-voltage capacitor with enhanced breakdown voltage capabilities without altering existing IC processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the dielectric layer thickness is increased to provide higher breakdown voltage, then the breakdown voltage capability is improved, but the manufacturing complexity and space constraints worsen
Solution Approach 1:
The patent transitions from planar capacitor design to a three-dimensional stacked capacitor structure. Multiple dielectric layers are stacked vertically between metal plates, enabling the dielectric thickness to extend in the vertical dimension rather than being constrained by lateral spacing. This dimensional change allows achieving higher breakdown voltage without increasing lateral footprint or manufacturing complexity
Solution Approach 2:
The patent implements a nested multi-layer structure where multiple dielectric layers are stacked between metal plates in a compact configuration. Each dielectric layer is nested within the vertical space defined by the metal plates, creating a space-efficient high-voltage capacitor that integrates seamlessly into the IC substrate without requiring additional lateral space
2Ease of manufacture
If conventional Metall to Metal5 layers are used for capacitor formation, then the manufacturing process is simple, but the breakdown voltage is insufficient for high-voltage applications
Solution Approach 1:
The patent changes the critical parameter of dielectric thickness by introducing additional dielectric layers stacked vertically between metal plates. This parameter change enables the capacitor to achieve breakdown voltages in the range of several kilovolts, far exceeding the capabilities of conventional single-layer capacitors formed by standard IC metallization layers
Solution Approach 2:
The patent employs a composite structure combining multiple dielectric materials and metal layers. The stacked configuration of different dielectric layers between conductive metal plates creates a composite capacitor structure that achieves high breakdown voltage while maintaining compatibility with standard IC fabrication processes
3Reliability
If large dielectric thickness is required for high breakdown voltage, then the voltage handling capability is improved, but the physical space available in the IC is insufficient
Solution Approach 1:
The patent resolves the space constraint by moving the dielectric thickness extension into the vertical dimension. Multiple dielectric layers are stacked between metal plates, allowing the effective dielectric thickness to be much larger than the lateral spacing would permit in a planar configuration. This enables high breakdown voltage in a compact IC footprint
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the creation of capacitors capable of handling several kilovolts, providing a higher breakdown voltage than conventional capacitors, while maintaining flexibility in material choice and minimizing interference with underlying IC structures.
Implementation Method 1
signal circuits may be galvanically isolated from one another using capacitive coupling on signal paths between the circuits
Implementation Method 2
The breakdown voltage of the resulting parallel plate capacitor is in part dependent upon the thickness of the dielectric layer
Data Source
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AI summary
A high-voltage metal capacitor with easy integration into existing semiconductor manufacturing processes can provide isolation capacitors up to several kilovolts. The capacitor includes a support layer with internal structure, including a lower place, a bond pad on the support layer, an upper plate disposed on the support layer, the upper plate being arranged above the lower plate, a dielectric layer, at least part of which is between the lower and upper plates, and a passivation layer, at least part of which covers at least part of the upper plate and part of the dielectric layer. A first opening extends from the surface through the passivation and dielectric layers to the lower plate, and a second opening extends from the surface through the passivation layer to the upper plate.