Semiconductor/Solid-State Device Details TRIZ Cases

Plating film forms on resin layer surfaces and groove inner walls to create conductive interconnects.

A packaged electronic device design uses dual-side cooling to manage heat from semiconductor dies.

A semiconductor chip stack uses distinct magnetic tunnel junction critical current densities to separate non-volatile storage from high-speed access.

Continuous waterfall wire bonding eliminates conductive bumps and high-force defects, increasing throughput by 22% to 64%.

A wafer manufacturing method uses trench dicing and patterned photoresist to form conductive bumps before final separation.

Thick film portions support overhanging semiconductor chips to prevent voids and chip cracking during molding resin filling.

Segmented support structure between inner and outer pads stabilizes interconnects, reducing overall package height and eliminating connection failures.

Internal information processing circuit routes chip signals through dedicated through vias to external pins for direct observation.

A structured interlayer extends beyond metallization edges to absorb thermal expansion mismatch, preventing brittle layer cracks.

Multi-layer routing via vertical vias resolves the contradiction between electrical connection reliability and manufacturing complexity in fan-out packages.

Vertical stacking of multiple dielectric layers between metal plates increases breakdown voltage to several kilovolts without expanding the lateral footprint.

Friction stir welding joins an insert into an extruded hollow body, removing brazing thermal resistance and boosting heat removal capacity.

Precious metal paste with optimized solvent boiling point and high thixotropy index prevents void formation during sintering.

Trenches etched into the substrate create a mechanical interlock that prevents mold delamination at the sensor interface.

Conductivity modulation of the semiconductor substrate changes impedance to enable galvanic isolation while reducing power consumption and magnetic sensitivity.

Multi-layered semiconductor wiring distributes current through intersecting patterns to prevent electro-migration failures from excessive electron collisions.

Forming a magnetic layer on the wafer surface before dicing suppresses radio interference without increasing device volume or adding post-production steps.

Material void patterns in bottom conductive layers balance bending resistances and thermal expansion coefficients, reducing warpage of the laminate substrate.

A semiconductor terminal with portions inside and outside resin sealing reduces device body size along the arrangement direction.

Convex enclosure surface applies uniform pressure to thermal interface material across the contact area.

Atomic layer deposition applies thin ceramic films to semiconductor die surfaces, preventing short circuits between contacts and solder pads during mounting.

Rounded encapsulation cavities expose vertical interconnects to resolve packaging density and reliability trade-offs in semiconductor devices.

Spacers covering step portions isolate adjacent wire lines, enabling thicker lead wires for improved manufacturing reliability without precise process control.

Segmented bonding areas with interlocking recesses prevent thermal stress peeling and substrate damage during high-current semiconductor assembly.

A semiconductor electric fuse uses a zigzag layout with projecting portions to reduce occupying area.

A Cu-Mo composite layer with controlled thickness bonds to copper surfaces to conduct heat efficiently.

Combining a glass plate with insulating layers in the support member prevents breakage and suppresses warpage during miniaturization of fan-out packages.

Segmenting the insulating layer into a resin-only film and a reinforced film prevents void formation while maintaining structural strength.

Segmenting the dielectric into non-conformal and conformal layers preserves air gap volume while sealing seams against moisture, reducing off-state capacitance.

Conformal parylene insulation suppresses creep currents and enhances disruptive strength on the semiconductor chip surface.

Via last process creates compact 3D integrated circuits with improved electrical connectivity while reducing warpage through planarization.

Silicon nitride films cover interlayer insulating interfaces to block moisture transfer paths that degrade semiconductor reliability.

Polyvinyl fluoride barrier layers enclose electrical conductors within sandwich components to create a vapour-tight enclosure.

Replacing multi-layer laminate stacks with a single polymeric passivation layer reduces manufacturing complexity and processing time.

Direct photopatterning of a composite glass ceramic substrate creates precise electrical isolation, avoiding costly semiconductor etching steps.

Film substrate structure uses vertically overlapping input and output patterns to reduce package footprint.

Selective laser ablation removes metal layers from resin molds based on thermal conductivity differences, reducing equipment costs and process complexity.

Mounting a benzocyclobutene-coated chip away from the exposed die pad delays moisture ingress, preventing interface peeling and electrical disconnection.

A compact thermoelectric cooler regulates laser diode temperature within a hermetic header assembly.

Embed metal wires in resin to connect pad electrodes, eliminating thick pillars and electrolytic plating for smaller size and higher productivity.

A semiconductor alignment key uses dummy holes with distinct critical dimensions to generate measurable etching steps for precise lithography registration.

A bonding tool guide directs a wire bonding tool into a retainer using a variable diameter aperture, resolving alignment difficulties during replacement.

A tungsten plug fabrication method uses a tapered dielectric mandrel to guide deposition and etch back processes for seamless contact formation.

A bus master flow control mechanism manages transaction queues across semiconductor dies in a wafer-level package.

A planarization layer fills gaps around protruding integrated circuit dies to create a flat surface for redistribution layer deposition.

A microelectronic device uses a protection ring to surround electrical contact regions and delimit a closed chamber for reliable connections.

Vertical conductive layers connect a buried metal resistive element to upper wiring, eliminating piezoresistive fluctuations from mold stress during packaging.

Variable stiffness dielectric layers prevent via dimpling and warpage in two-layer embedded trace substrates.

Electrodeposition produces metal layers of varying thicknesses on insulating substrates to reduce signal channel lengths and packaging complexity.

Replacing deep through silicon vias with conductive posts reduces fabrication complexity and prevents copper ion diffusion issues.

Segmented lead frame design with decoupled end portions prevents positional deviations and ensures accurate singulation of light emitting devices.

Integrating a power FET and control die on opposing leadframes reduces signal loop impedance, mitigating voltage overshoot for higher frequency communications.

A gate contact structure positioned vertically above an active region conserves valuable semiconductor space.

Extending contact pads onto QFN sidewalls exposes hidden solder joints, enabling automatic optical inspection without increasing device complexity.

Direct deposition on sloped surfaces eliminates mask development and repositioning, enabling compact low-impedance interconnects for high-density chips.

Elastic polymeric adhesive aligns conductive posts of dies with varying heights for subsequent redistribution structure formation.

Embedded guide rails route coolant through a PCB core substrate, reducing semiconductor junction temperatures during high-frequency operation.

A common mode choke coil positions windings to avoid resin accumulation in core grooves.

Ferrite protection layers shield semiconductor devices from electromagnetic interference while porous alleviation layers reduce parasitic capacitance.

Segmented tiles with controlled gaps block electromagnetic interference while maintaining high thermal conductivity for high-frequency components.

Segmenting the JFET channel with alternating n-type and p-type top layers increases driving current while lowering pinch-off voltage without adding masks.

Identical memory chips stack above integrated circuit chips to boost data transfer rates while reducing manufacturing costs and design complexity.

Segmented bottom and side shielding protects electrical contacts while coupling to ground planes, resolving electromagnetic interference trade-offs.

A photolithography-free laser process splits and shapes beams to directly write alignment marks, eliminating costly multi-step chemical procedures.

A recessed conductive pillar structure accommodates contact misalignment in stacked integrated circuit assemblies.

Segmenting the stack into Pd and Co layers resolves the trade-off between substrate adhesion strength and diffusion barrier reliability.

A socket loading mechanism couples a microprocessor to a heat sink via a bolster plate, reducing thermal resistance and mechanical stress in server packages.

A flexible silicone film bonds semiconductor light emitting device wafers to substrates, enabling efficient division and improved light extraction.

A spring-loaded bond tool compresses during die transfer to regulate attachment pressure.

Segmented isolation structure with stacked epitaxial layers increases breakdown voltage while maintaining planarization and preventing electric leakage.

Plasma activation bonds semiconductor chips to substrates without solder bumps, eliminating thermal deformation and position shift during alignment.

Selective cap layer deposition and etching define BEOL interconnects, resolving planarity versus conformability trade-offs to prevent feature loss.

A multi-die integrated circuit structure uses a heat sink coupled to each die via solder bumps or adhesive to manage thermal dissipation.

Aluminum-diamond composite heat sink uses amorphous nickel alloy plating to maintain surface smoothness for semiconductor bonding.

An angled substrate structure simplifies passive component integration within fan-out wafer level packages.

A ceramic buffer layer with intermediate thermal expansion and high stiffness sits between the transducer and substrate.

A semiconductor device incorporates a resin groove to extend the surface creepage distance between terminals.

An embedded landing pad within a through-silicon via reduces space occupancy while ensuring precise alignment and reliable electrical connectivity.

Rotating the triangular lattice of lands by 7 to 23 degrees balances leading wire distribution and increases design freedom.

Copper posts replace melting solder balls in wafer level chip scale packages, enabling reliable substrate embedding with high current capacity.

Etched rounded corners and scribe regions mitigate thermal and mechanical stresses during saw blade singulation, reducing die defects.

A composite wiring structure combines aluminum and refractory metal layers to reduce electrical resistance in display units.

Phase-change heat pipes with insulated sleeves evacuate high amperage heat loads from medium-voltage apparatus casings.

A flat no-leads package uses a customized leadframe with multi-level RF pins to optimize internal compensation.

Strategic placement of bonded portions between circular ranges distributes stress evenly, preventing cracks in stacked semiconductor apparatuses.

A self-aligning optical sensor package uses lead frame reference features to passively align a laser and detector array.

Stacked DBC packages in a coolant chamber resolve thermal management complexity.

Matching thermal expansion coefficients in the dielectric stack prevent cracking and delamination during reflow operations.

A power module housing uses a pressurizable sealing means to contain explosive gases and absorb kinetic energy during thermal faults.

Thermocompression bonding with a disposable polymer sheet stabilizes thin wafers during grinding while eliminating adhesive residue.

A stiffening microstructure extends vertically within a packaging substrate opening to increase torsional rigidity and contact area.

Thin lead extensions engage case holding portions to prevent separation from thermal stress while enabling LED module size reduction.

Elastic members in a retainer adjust fastening force to balance heat dissipation efficiency against electronic device damage risks.

A glass wiring substrate uses tapered through holes to form connection pads and wiring layers with smaller pitches.

Current reception circuit detects signal levels using a constant current source, reducing ground voltage variation impact on data transmission reliability.

A capillary with a hole portion and chamfer section forms pillar bumps by withdrawing a free air ball into the tool.

Heating the base substrate during vacuum evaporation optimizes organic layer morphology to extend OLED device service life.

A single-mask metal-insulator-metal capacitor uses low resistivity electrodes and a high-K dielectric stack to boost capacitance density.