Semiconductor/Solid-State Device Details TRIZ Cases

Plating film forms on resin layer surfaces and groove inner walls to create conductive interconnects.

A packaged electronic device design uses dual-side cooling to manage heat from semiconductor dies.

A semiconductor chip stack uses distinct magnetic tunnel junction critical current densities to separate non-volatile storage from high-speed access.

Continuous waterfall wire bonding eliminates conductive bumps and high-force defects, increasing throughput by 22% to 64%.

A wafer manufacturing method uses trench dicing and patterned photoresist to form conductive bumps before final separation.

Thick film portions support overhanging semiconductor chips to prevent voids and chip cracking during molding resin filling.

Segmented support structure between inner and outer pads stabilizes interconnects, reducing overall package height and eliminating connection failures.

Internal information processing circuit routes chip signals through dedicated through vias to external pins for direct observation.

A structured interlayer extends beyond metallization edges to absorb thermal expansion mismatch, preventing brittle layer cracks.

Multi-layer routing via vertical vias resolves the contradiction between electrical connection reliability and manufacturing complexity in fan-out packages.

Vertical stacking of multiple dielectric layers between metal plates increases breakdown voltage to several kilovolts without expanding the lateral footprint.

Friction stir welding joins an insert into an extruded hollow body, removing brazing thermal resistance and boosting heat removal capacity.

Precious metal paste with optimized solvent boiling point and high thixotropy index prevents void formation during sintering.

Trenches etched into the substrate create a mechanical interlock that prevents mold delamination at the sensor interface.

Conductivity modulation of the semiconductor substrate changes impedance to enable galvanic isolation while reducing power consumption and magnetic sensitivity.

Multi-layered semiconductor wiring distributes current through intersecting patterns to prevent electro-migration failures from excessive electron collisions.

Forming a magnetic layer on the wafer surface before dicing suppresses radio interference without increasing device volume or adding post-production steps.

Material void patterns in bottom conductive layers balance bending resistances and thermal expansion coefficients, reducing warpage of the laminate substrate.

A semiconductor terminal with portions inside and outside resin sealing reduces device body size along the arrangement direction.

Convex enclosure surface applies uniform pressure to thermal interface material across the contact area.

Atomic layer deposition applies thin ceramic films to semiconductor die surfaces, preventing short circuits between contacts and solder pads during mounting.

Rounded encapsulation cavities expose vertical interconnects to resolve packaging density and reliability trade-offs in semiconductor devices.

Spacers covering step portions isolate adjacent wire lines, enabling thicker lead wires for improved manufacturing reliability without precise process control.

Segmented bonding areas with interlocking recesses prevent thermal stress peeling and substrate damage during high-current semiconductor assembly.

A semiconductor electric fuse uses a zigzag layout with projecting portions to reduce occupying area.

A Cu-Mo composite layer with controlled thickness bonds to copper surfaces to conduct heat efficiently.

Combining a glass plate with insulating layers in the support member prevents breakage and suppresses warpage during miniaturization of fan-out packages.

Segmenting the insulating layer into a resin-only film and a reinforced film prevents void formation while maintaining structural strength.

Segmenting the dielectric into non-conformal and conformal layers preserves air gap volume while sealing seams against moisture, reducing off-state capacitance.

Conformal parylene insulation suppresses creep currents and enhances disruptive strength on the semiconductor chip surface.

Via last process creates compact 3D integrated circuits with improved electrical connectivity while reducing warpage through planarization.

Silicon nitride films cover interlayer insulating interfaces to block moisture transfer paths that degrade semiconductor reliability.

Polyvinyl fluoride barrier layers enclose electrical conductors within sandwich components to create a vapour-tight enclosure.

Replacing multi-layer laminate stacks with a single polymeric passivation layer reduces manufacturing complexity and processing time.

Direct photopatterning of a composite glass ceramic substrate creates precise electrical isolation, avoiding costly semiconductor etching steps.

Film substrate structure uses vertically overlapping input and output patterns to reduce package footprint.

Selective laser ablation removes metal layers from resin molds based on thermal conductivity differences, reducing equipment costs and process complexity.

Mounting a benzocyclobutene-coated chip away from the exposed die pad delays moisture ingress, preventing interface peeling and electrical disconnection.

A compact thermoelectric cooler regulates laser diode temperature within a hermetic header assembly.

Embed metal wires in resin to connect pad electrodes, eliminating thick pillars and electrolytic plating for smaller size and higher productivity.

A semiconductor alignment key uses dummy holes with distinct critical dimensions to generate measurable etching steps for precise lithography registration.

A bonding tool guide directs a wire bonding tool into a retainer using a variable diameter aperture, resolving alignment difficulties during replacement.

A tungsten plug fabrication method uses a tapered dielectric mandrel to guide deposition and etch back processes for seamless contact formation.

A bus master flow control mechanism manages transaction queues across semiconductor dies in a wafer-level package.

A planarization layer fills gaps around protruding integrated circuit dies to create a flat surface for redistribution layer deposition.

A microelectronic device uses a protection ring to surround electrical contact regions and delimit a closed chamber for reliable connections.

Vertical conductive layers connect a buried metal resistive element to upper wiring, eliminating piezoresistive fluctuations from mold stress during packaging.

Variable stiffness dielectric layers prevent via dimpling and warpage in two-layer embedded trace substrates.

Electrodeposition produces metal layers of varying thicknesses on insulating substrates to reduce signal channel lengths and packaging complexity.