Polymeric Passivation Layer for Semiconductor Chip Stress Relief

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Solution Overview

Problem

Conventional semiconductor chip passivation structures require multiple complex and time-consuming steps, involving multiple material movements and chemical vapor deposition processes, which increase manufacturing time and complexity, and often involve separate facilities for different processing stages.

Innovation Solution

A monolithic polymeric passivation layer is applied to the semiconductor chip, which serves both as a protective layer and provides thermal mechanical stress relief, eliminating the need for a multi-layer laminate passivation structure and reducing processing steps by allowing conductor pad exposure through a single deposition and patterning process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a multi-layer laminate passivation structure with alternating silicon nitride and undoped silicate glass layers is used, then protection and thermal stress relief are provided, but the number of material movements and CVD processes increases significantly

Engineering Contradiction:
Improveprotection and thermal stress reliefVSAvoidnumber of material movements and CVD processes
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines multiple separate passivation layers (silicon nitride and undoped silicate glass) into a single polymeric passivation layer. This merging of multiple protective functions into one integrated layer eliminates the need for alternating deposition processes and reduces the number of material movements while maintaining protection and thermal stress relief capabilities

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The polymeric passivation layer is designed to perform multiple functions simultaneously: it provides mechanical protection, thermal stress relief, and electrical insulation. This multi-functional approach replaces the need for separate specialized layers, reducing process complexity while maintaining reliability

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If a six layer stack of alternating silicon nitride and undoped silicate glass is applied, then adequate passivation and stress management are achieved, but manufacturing time and processing steps increase

Engineering Contradiction:
Improvepassivation and stress managementVSAvoidmanufacturing time and processing steps
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent merges six separate deposition steps for alternating layers into a single polymeric layer application process. This consolidation dramatically reduces manufacturing time and processing steps while maintaining the essential passivation and stress management functions through the engineered properties of the polymeric material

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If separate facilities are used for passivation structure formation and polyimide layer application, then specialized processing is achieved, but material handling and coordination complexity increase

Engineering Contradiction:
Improvespecialized processingVSAvoidmaterial handling and coordination
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines the functions of separate passivation structure formation and polyimide layer application into a single polymeric passivation layer that can be processed in one facility. This integration eliminates the need for wafer shipment between vendors and reduces coordination complexity while maintaining manufacturing precision through controlled single-facility processing

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS7973408B2Semiconductor chip passivation structures and methods of making the same
Publication Date: 2011.07.05 ATI TECHNOLOGIES ULC
  • US7973408B2 patent drawing
  • US7973408B2 patent drawing
  • US7973408B2 patent drawing

AI summary

Various semiconductor chip passivation structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes applying a polymeric passivation layer to a side of a semiconductor chip. The side of the semiconductor chip includes plural conductor pads. Plural openings are formed in the polymeric passivation layer to expose the plural conductor pads. Plural conductor structures are formed on the plural conductor pads.