Light Emitting Device Metal Wire Resin Embedding
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Solution Overview
Problem
The existing light emitting devices with removed or thinned growth substrates require lengthy processes for forming thick metal pillars, leading to low productivity and larger device sizes due to the need for thick resin layers and electrolytic plating, which hampers mass productivity and size reduction.
Innovation Solution
A face-down light emitting device design incorporating metal wires embedded in a resin layer to connect pad electrodes to connection electrodes, allowing for rapid electrical connections and flexible wire arrangements that reduce device size and enhance productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If thick metal pillars are formed by electrolytic plating to ensure sufficient strength, then the device strength is improved, but the manufacturing time increases and productivity decreases
Solution Approach 1:
The invention changes the thickness parameter of the metal connection layer from thick (several tens of microns or more) to thin (1 micrometer or less) by switching from electrolytic plating to sputtering deposition. This parameter change maintains sufficient electrical connection strength while dramatically reducing formation time and improving productivity
Solution Approach 2:
The invention replaces the electrolytic plating process with a sputtering deposition process. This substitution changes the deposition mechanism from electrochemical to physical vapor deposition, enabling thin film formation with high precision and speed, thus resolving the contradiction between strength and productivity
2Strength
If thick resin layers are used to support the semiconductor chip, then the device strength is improved, but the device size increases
Solution Approach 1:
The invention changes the thickness parameter of the metal connection layer to 1 micrometer or less, which allows the resin layer to be made thin without compromising overall device strength. This parameter change enables both small device size and sufficient structural support
3Reliability
If metal pillars are formed to penetrate the resin layer for electrical connection, then the electrical connection is improved, but the manufacturing complexity and time increase
Solution Approach 1:
The invention extracts the metal connection layer formation process from the resin layer after-formation process. By forming the thin metal connection layer by sputtering before or during resin layer formation, the need for subsequent complex metal pillar formation and penetration processes is eliminated, simplifying the overall manufacturing process
Solution Approach 2:
The invention merges the metal connection layer formation with the resin layer formation processes. By using sputtering to deposit the metal layer in situ or concurrently with resin application, the separate steps of metal pillar formation and resin layer formation are combined into a more integrated process, reducing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of small-sized light emitting devices with sufficient strength and high mass productivity by eliminating the need for thick metal pillars and electrolytic plating, improving design flexibility and reliability.
Implementation Method 1
one or more metal wires disposed in the resin layer. The one or more wires are adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode
Data Source
Figure 1A~1C
Figure 2A~2C
Figure 3A~3C
AI summary
A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.