Hybrid Bonding Structures for Shorter Die-to-Die Interconnects
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Solution Overview
Problem
Semiconductor package designs face challenges in reducing interconnect lengths to minimize ohmic loss, heat generation, and signal delay, particularly in complex packages with multiple integrated circuits, necessitating improvements in die-to-die bonding structures and methods.
Innovation Solution
A hybrid bonding process is employed, involving the formation of metal-to-metal bonds followed by dielectric-to-dielectric bonds, allowing for greater manufacturing flexibility and reduced void formation through protruding bonding structures that deform during annealing processes, enabling direct metal-to-metal and dielectric-to-dielectric connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If package size is increased to accommodate more integrated circuits and dies, then the quantity of components per package is improved, but interconnect length increases leading to higher ohmic loss and signal delay
Solution Approach 1:
The patent transitions from planar packaging to three-dimensional stacked packaging, arranging multiple semiconductor dies vertically in layers. This dimensional change allows more components to be packed in a smaller footprint while keeping interconnect lengths short through vertical stacking and through-silicon via connections.
Solution Approach 2:
The patent implements a nested structure where multiple semiconductor dies are stacked vertically, with each die containing circuit components and interconnect structures. The dies are nested within a package substrate that provides additional interconnect layers, creating a compact nested arrangement that reduces overall interconnect length.
2Ease of manufacture
If die-to-die bonding is performed with protruding bonding structures, then manufacturing flexibility is improved and void formation is reduced, but the bonding process complexity increases
Solution Approach 1:
The patent forms protruding bonding structures on the semiconductor dies before the actual bonding process. These pre-formed protrusions extend beyond the die surface and are designed to deform during bonding, automatically compensating for alignment variations and reducing void formation without requiring complex real-time control.
Solution Approach 2:
The patent utilizes temperature and pressure parameter changes during the bonding process to deform the protruding bonding structures. The protrusions are designed to yield at specific stress thresholds, allowing manual alignment methods to be effective while automatically eliminating gaps and voids through controlled deformation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces interconnect lengths, lowers ohmic loss, and minimizes signal delay while providing cost-effective and high-performance semiconductor devices with optimized die-to-die bonding structures.
Implementation Method 1
protruding bonding structures that deform during annealing processes
Implementation Method 2
protruding bonding structures that deform during annealing processes
Data Source
AI summary
An embodiment method of forming a hybrid bond between a first semiconductor device component and a second semiconductor device component may include forming the first semiconductor device component including a first electrical bonding structure formed within a first dielectric material; forming the second semiconductor device component including a second electrical bonding structure formed within a second dielectric material; placing the first semiconductor device component and the second semiconductor device component together such that the first electrical bonding structure is in contact with the second electrical bonding structure; performing a first annealing process that forms a direct metal-to-metal bond between the first electrical bonding structure and the second electrical bonding structure; and performing a second annealing process that forms a direct dielectric-to-dielectric bond between the first dielectric material and the second dielectric material.