Hybrid Bonding Grounding Structure for Parasitic Charge Buildup
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Solution Overview
Problem
In hybrid bonding, as hybrid bond pads are scaled closer, parasitic charge buildup occurs due to voltage differences between adjacent pads, leading to potential short circuits and thermal issues.
Innovation Solution
A parasitic capacitance grounding structure is introduced, featuring conductive networks and anti-fuse dielectrics that collect and dissipate excess charge to ground, preventing parasitic capacitance buildup and maintaining signal integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If hybrid bond pads are moved closer for scaling purposes, then device density and integration are improved, but parasitic charge buildup occurs in the dielectric material leading to potential short circuits and thermal issues
Solution Approach 1:
A ground network is introduced as an intermediary element between the signal pads and the substrate ground. This ground network collects parasitic charges that build up in the dielectric material between closely-spaced pads and safely dissipates them to ground, preventing short circuits and thermal issues while allowing the pads to remain closely spaced for high density
Solution Approach 2:
The solution employs a composite structure combining signal pads, dummy pads, dielectric material, and ground network elements. The dummy pads filled with conductive material or connected to ground form a composite grounding structure that works together with the dielectric and signal pads to manage parasitic capacitance in the scaled-down configuration
2Productivity
If hybrid bond pads are moved closer for scaling purposes, then device density is improved, but potential short circuits and thermal issues arise from parasitic capacitance
Solution Approach 1:
The ground network serves as a mediator that intercepts parasitic charges before they can cause harmful effects. By providing a dedicated charge collection and dissipation path, it enables close pad spacing for high density while maintaining reliability through active parasitic management
Solution Approach 2:
The harmful parasitic charges are extracted from the dielectric material through the ground network. Dummy pads are strategically placed and connected to ground to specifically target and remove parasitic charge accumulation points, separating the charge management function from the signal transmission function
3Object-affected harmful factors
If a ground network is introduced to manage parasitic capacitance, then parasitic charge buildup is reduced, but device complexity increases
Solution Approach 1:
The ground network is designed to perform multiple functions simultaneously: it provides a charge collection path for parasitic capacitance management, establishes reference potentials for signal stability, and offers thermal conduction pathways. This multi-functionality reduces the need for separate dedicated structures for each function
Solution Approach 2:
The grounding structure is merged with the existing pad layout and dielectric layers. Dummy pads are integrated into the same dielectric layer as the signal pads, and the ground network traces are routed within the existing interconnect layers, combining charge management functionality with the standard hybrid bonding structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively grounds parasitic capacitance, enhancing performance, reliability, and reducing thermal stress, while being scalable and compatible with existing manufacturing processes.
Implementation Method 1
operating the structure until excess charge builds up in the upper build dielectric and the lower build dielectric to blow the upper and lower build anti-fuse dielectrics; and conducting the excess charge to ground through the blown upper and lower build anti-fuse dielectrics
Implementation Method 2
The two builds are brought together and a small heat treatment/annealing process is carried out. The oxides bond together and the metals 'anneal,' or almost melt, together, thus fusing the interface into a single bonded part
Data Source
AI summary
An upper semiconductor build has an upper build dielectric; at least two upper build electrical signal contact bonding pads; at least one upper build dummy contact bonding pad; an upper build ground network electrically coupled to the at least two upper build electrical signal contact bonding pads; and an upper build anti-fuse dielectric between the upper build ground network and the upper build dummy contact bonding pad. A lower semiconductor build has a lower build dielectric; at least two lower build electrical signal contact bonding pads; at least one lower build dummy contact bonding pad; a lower build ground network; and a lower build anti-fuse dielectric between the lower build ground network and the lower build dummy contact bonding pad. The two builds are hybrid bonded to each other. When excess charge builds up, the anti-fuse dielectrics are blown and conduct the excess charge to ground.