Hybrid Mask Programmable Anti-Fuse Memory Array Architecture
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Solution Overview
Problem
Existing one-time programmable (OTP) memories are slow in programming speed and lack user programmability, as they require significant program cycles for batch programming, which adds time overhead and is not cost-effective for applications where data is only programmed once.
Innovation Solution
A hybrid memory array that combines electrically programmable and mask programmable anti-fuse memory cells, allowing for both fast mask programming during manufacturing and user-programmable electric programming post-manufacturing, with a program lock circuit to prevent accidental reprogramming of mask-programmed cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mask programming is used for initial programming during manufacturing, then programming speed is improved and cost-effectiveness is enhanced, but the memory loses user programmability post-manufacturing
Solution Approach 1:
The memory array is segmented into two distinct types of memory cells: mask programmable anti-fuse cells for initial manufacturing programming and electrically programmable anti-fuse cells for user programming. This segmentation allows each cell type to be optimized for its specific programming method, resolving the contradiction between fast mask programming and user programmability.
Solution Approach 2:
The memory device provides multi-functionality by supporting both mask programming during manufacturing and electrical programming by users. The hybrid architecture enables the same memory device to serve dual purposes: fast initial programming via mask and flexible user programming via electrical methods, eliminating the need to choose between these conflicting requirements.
2Adaptability or versatility
If electrical programming is used for OTP memory, then user programmability is maintained, but programming time overhead increases significantly
Solution Approach 1:
By segmenting the memory into mask programmable and electrically programmable cells, the invention allows time-critical initial programming to be performed via mask during manufacturing, while user programming can be performed electrically when needed. This eliminates the time overhead for mask programming while maintaining user programmability for applications requiring it.
Solution Approach 2:
The mask programming is performed as a preliminary action during manufacturing before the product reaches the user. This preliminary programming handles the initial data loading efficiently, while electrical programming is reserved for subsequent user needs, optimizing the overall time efficiency.
3Ease of manufacture
If mask programming is used for batch programming, then cost-effectiveness is improved, but flexibility for individual programming is lost
Solution Approach 1:
The hybrid memory architecture segments cells into mask programmable types for cost-effective batch manufacturing and electrically programmable types for flexible individual programming. This allows the manufacturing process to choose the most cost-effective method for each cell type based on requirements.
Solution Approach 2:
Different regions or cells within the same memory device have different programming characteristics tailored to their specific needs. Some cells are optimized for mask programming with local structural features, while others are optimized for electrical programming, allowing each to have the appropriate quality for its intended use.
4Reliability
If anti-fuse structure is used for OTP memory, then reliability is improved, but manufacturing complexity increases due to additional process steps
Solution Approach 1:
Both mask programmable and electrically programmable anti-fuse cells use the same fundamental anti-fuse structure and are fabricated using the same CMOS process steps. This homogeneity in structure and process reduces manufacturing complexity while maintaining the reliability benefits of the anti-fuse mechanism for both cell types.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid memory array enables fast and cost-effective initial programming during manufacturing while allowing user-programmable data entry post-manufacturing, reducing overhead and ensuring data security by preventing accidental reprogramming of mask-programmed cells.
Implementation Method 1
a gate oxide structure having an oxide breakdown region fusible to form a permanent conductive channel between the polysilicon gate and a substrate beneath
Data Source
AI summary
A memory array having both mask programmable and one-time programmable memory cells connected to the wordlines and the bitlines. All memory cells of the memory array are configured as one-time programmable memory cells. Any number of these one-time programmable memory cells are convertible into mask programmable memory cells through mask programming, such as diffusion mask programming or contact/via mask programming. Manufacturing of such a hybrid memory array is simplified because both types of memory cells are constructed of the same materials, therefore only one common set of manufacturing process steps is required. Inadvertent user programming of the mask programmable memory cells is inhibited by a programming lock circuit.