Hybrid Semiconductor Memory Using Resistive Change for Fast Data Retention
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Solution Overview
Problem
Current semiconductor memory devices either lose data when power is discontinued (volatile memory) or operate slowly (non-volatile memory), lacking a universal type that balances speed with data retention.
Innovation Solution
A semiconductor memory array incorporating both volatile and non-volatile functionality, utilizing resistive change material such as bipolar resistive memory elements, where the volatile memory is charged based on the resistivity of the bipolar resistive change element upon power restoration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-volatile memory devices are used, then data retention is improved, but operation speed deteriorates
Solution Approach 1:
The memory device is divided into two distinct memory types: volatile memory for fast data storage and non-volatile memory for data retention. Each memory type operates independently, allowing the system to leverage the speed advantage of volatile memory while maintaining the data retention capability of non-volatile memory through selective data copying between the two memory types.
Solution Approach 2:
The patent combines volatile memory and non-volatile memory into a single integrated memory device. This merging allows the system to simultaneously exhibit both fast operation characteristics (from volatile memory) and data retention characteristics (from non-volatile memory), resolving the contradiction between speed and reliability.
2Speed
If volatile memory devices are used, then operation speed is improved, but data retention deteriorates
Solution Approach 1:
The system performs preliminary actions by copying data from volatile memory to non-volatile memory before power loss can occur. This proactive data duplication ensures that even though volatile memory loses data when powered off, the non-volatile memory has already preserved the data, thereby maintaining data retention without sacrificing operation speed during powered operation.
3Adaptability or versatility
If both volatile and non-volatile memory are integrated, then functionality is improved, but device complexity increases
Solution Approach 1:
The integrated memory device is designed to perform multiple functions: it can operate as a standard volatile memory, as a non-volatile memory, or as a hybrid system with data replication capabilities. This multi-functionality allows a single device to replace what would traditionally require separate volatile and non-volatile memory components, thereby improving versatility while managing complexity through integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables fast operation akin to volatile memories while retaining data when power is off, achieving a balance between speed and data retention without increasing device size significantly.
Implementation Method 1
non-volatile memory comprising a bipolar resistive change element
Implementation Method 2
the volatile memory is configured to be charged to a level indicative of a state of the memory cell based on resistivity of the bipolar resistive change element
Data Source
AI summary
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.