3D Hybrid Memory Stack Using NVM Layers for Thermal Buffering
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Solution Overview
Problem
Current memory technologies face challenges such as yield issues, non-linear power increase, thermal management, and scalability limitations in achieving high memory density and performance, particularly due to the limitations of traditional DRAM and the inefficiencies in hybrid memory systems that do not fully leverage the unique properties of volatile and non-volatile memory technologies.
Innovation Solution
The use of stacked memory dies that combine high and low operational temperature memory technologies, including non-volatile memory technologies like FeRAM and volatile memory technologies like DRAM, to create hybrid memory stacks that optimize performance and power efficiency by exploiting the specific properties of each memory type, with non-volatile memory dies functioning as temperature buffers and tolerating higher temperatures without increased refresh rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional DRAM is used to increase memory density, then memory capacity increases, but power consumption increases non-linearly and thermal management becomes difficult
Solution Approach 1:
The memory system is segmented into multiple types (DRAM, FeRAM, MRAM, PCM) with different characteristics, organized in a hybrid architecture where each type serves specific functions. This segmentation allows the system to leverage the high speed of DRAM for frequently accessed data while using non-volatile memories for less frequently accessed data, thereby reducing overall power consumption while maintaining high memory density.
Solution Approach 2:
Different memory types are strategically placed in the memory hierarchy based on their local qualities: DRAM is positioned for high-speed access to hot data, while FeRAM, MRAM, and PCM are used for cold data storage. This local quality assignment optimizes the trade-off between speed, power, and density for different data sets, reducing non-linear power increase while achieving high memory capacity.
2Speed
If stacked DRAM is used to increase memory bandwidth, then memory bandwidth increases, but thermal challenges negatively impact DRAM retention
Solution Approach 1:
Non-volatile memory types (FeRAM, MRAM, PCM) are introduced as intermediary layers in the memory stack between the CPU and DRAM. These intermediary memories act as thermal buffers, absorbing heat away from the DRAM layers while maintaining data retention capabilities at elevated temperatures, thus protecting DRAM retention reliability while preserving high bandwidth through the stacked architecture.
3Use of energy by stationary object
If non-volatile memory is used to avoid refresh requirements, then power efficiency improves, but scalability and large capacity are limited
Solution Approach 1:
The patent merges multiple memory types (DRAM, FeRAM, MRAM, PCM) into a unified hybrid memory system. Non-volatile memories provide refresh-free operation for power efficiency, while their capacities are combined and complemented by DRAM layers to achieve large overall system capacity. This merging allows the system to overcome the individual capacity limitations of each non-volatile memory type while maintaining their power efficiency advantages.
4Loss of time
If HBM stack is used to reduce off-chip access latency, then access latency decreases, but yield challenges and complexity increase
Solution Approach 1:
The hybrid memory stack is designed with multi-functionality where different memory types serve multiple purposes: DRAM provides high-speed caching, non-volatile memories provide persistent storage and thermal management, and the stacked architecture itself provides both high bandwidth and reduced latency. This universal design reduces the need for separate specialized components, thereby managing complexity while achieving low access latency through integrated multi-functional memory layers.
Data Source
AI summary
Disclosed wherein stacked memory dies that utilize a mix of high and low operational temperature memory and non-volatile based memory dies, and chip packages containing the same. High temperature memory dies, such as those using non-volatile memory (NVM) technologies are in a memory stack with low temperature memory dies, such as those having volatile memory technologies. In some cases, the high temperature memory technologies could be used together, in some cases, on the same IC die as logic circuitry. In one example, a memory stack is provided that include a first memory IC die having high temperature memory circuitry, such as non-volatile memory, stacked below a second memory IC die. The second memory IC die has high temperature memory circuitry, such as volatile memory circuitry.


