Hybrid Plasma-Semiconductor Transistor Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electronic devices rely heavily on solid state semiconductors, limiting the control and application of plasma in electronics and displays, as external voltages or magnetic fields are often required to influence plasma properties, which is not sustainable for all plasma-based devices.
Innovation Solution
Hybrid plasma-semiconductor devices are developed, where a plasma, preferably a microplasma, is integrated with conventional solid state semiconductor regions to perform semiconducting functions, such as in transistors, allowing for enhanced control and functionality without the need for external influences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If plasma is used in electronic devices, then new functionalities and electron densities are achieved, but external voltages or magnetic fields are required to influence plasma properties
Solution Approach 1:
The patent combines plasma generation electrodes directly with semiconductor transistor structures, merging two previously separate systems into a single integrated device. The plasma electrodes serve dual functions as both plasma generation elements and transistor control electrodes, eliminating the need for separate external control systems.
Solution Approach 2:
The electrodes in the hybrid device serve multiple functions: they generate plasma, control plasma properties, and function as transistor gates or collectors. This multi-functionality reduces the number of separate components needed and simplifies the overall device architecture while maintaining plasma adaptability.
2Reliability
If plasma is integrated with semiconductor regions, then enhanced electron densities and light emission are achieved, but device structure complexity increases
Solution Approach 1:
The plasma region is nested within or adjacent to the semiconductor transistor structure, with plasma electrodes positioned to overlap with active semiconductor regions. This nested arrangement allows close interaction between plasma and semiconductor while maintaining a compact, organized device layout.
Solution Approach 2:
The device structure provides different local environments: solid-state semiconductor regions for stable electrical control and plasma regions for high electron density and light emission. Each region is optimized for its specific function while being integrated into a unified device architecture.
3Ease of operation
If external fields are used to control plasma, then plasma properties can be influenced, but power consumption increases
Solution Approach 1:
The plasma control is achieved through the transistor's own operating voltages and currents, rather than requiring separate external control systems. The transistor gate voltage or collector voltage directly controls plasma generation and properties, making the system self-regulating and reducing overall power requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These devices provide new properties and functionalities, such as reduced operating voltage, enhanced electron densities, and light emission modulation, suitable for high-resolution displays, sensors, and high-power applications, while maintaining low power consumption.
Implementation Method 1
a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function
Implementation Method 2
In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor, serving as the collector of the transistor
Data Source
AI summary
The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.