Hybrid SRAM Flash Memory Unit for Non-Volatile Data Retention

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Solution Overview

Problem

Conventional SRAM is volatile, leading to data loss when power is shut down, while non-volatile memory solutions like flash memory lack the high-speed operation of SRAM.

Innovation Solution

A memory unit incorporating two non-volatile devices with a charge storage layer and a control gate, coupled with MOS transistors, allowing data storage that persists even when power is shut down, combining high-speed operation with non-volatile data retention.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If SRAM is used for high-speed operation, then operation speed is improved, but data retention when power is shut down deteriorates (data is lost)

Engineering Contradiction:
Improveoperation speedVSAvoiddata retention
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent merges SRAM and flash memory into a single hybrid memory unit. The SRAM portion provides high-speed operation while the flash memory portion provides non-volatile data retention. The two memory types are integrated shareing common control logic and storage elements, allowing the system to simultaneously achieve the speed of SRAM and the data retention of flash memory without requiring separate memory systems.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If flash memory is used for non-volatile data storage, then data retention when power is shut down is improved, but operation speed deteriorates

Engineering Contradiction:
Improvedata retentionVSAvoidoperation speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent combines flash memory with SRAM in a hybrid architecture where the flash memory provides non-volatile storage capability while the SRAM provides high-speed access. The integrated design allows data to be rapidly accessed from the SRAM portion while maintaining the ability to retain data in the flash memory portion even when power is removed, thus achieving both fast operation and reliable data retention.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If hybrid memory structure is implemented, then both high-speed operation and non-volatile data retention are achieved, but device complexity increases

Engineering Contradiction:
Improvefunctional capabilityVSAvoidstructure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent integrates SRAM and flash memory into a unified hybrid memory unit shareing control logic, address decoding, and storage elements. This merging approach achieves both high-speed operation and non-volatile data retention while managing complexity through shared infrastructure rather than fully separate systems.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The hybrid memory unit is designed to perform multiple functions within a single device structure. The same control logic and address decoding circuitry serve both the SRAM and flash memory portions, allowing the device to operate in different modes (high-speed access mode and non-volatile storage mode) without requiring separate control systems for each memory type.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The memory unit effectively stores data in non-volatile devices, ensuring data integrity even without power, while maintaining high-speed operation, thus addressing the limitations of both SRAM and flash memory.

Implementation Method 1

The charge storage layer is disposed on the substrate. A plurality of charges is stored on one side of the charge storage layer to accelerate the speed for programming another side of the charge storage layer

Methodology Applied
Scientific EffectCharge storage: Electrical Accumulator

Data Source

PatentUS7778076B2Memory unit
Publication Date: 2010.08.17 MACRONIX INTERNATIONAL CO LTD
  • US7778076B2 patent drawing
  • US7778076B2 patent drawing
  • US7778076B2 patent drawing

AI summary

A memory unit is provided herein. Two non-volatile devices are used to store a logic state of the memory unit into the non-volatile devices. Although a power supply for the memory unit is shut down, the non-volatile devices still keep the data stored therein. The present invention not only has an advantage of high speed operation of a static random access memory (SRAM), but also has a function for storing data of a non-volatile memory.