Hybrid Substrate Power Module Packaging for Low Loop Inductance
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Solution Overview
Problem
The existing packaging technologies for third-generation semiconductor GaN/SiC devices face challenges in simultaneously achieving reduced loop inductance and effective heat dissipation, limiting their high-power and high-frequency applications.
Innovation Solution
A high-frequency high-power packaging module is designed, comprising a power conversion bridge arm, high-frequency capacitor, circuit layer, insulating heat-conducting plate, and plastic package body, with specific electrical and thermal connections to minimize loop inductance while maintaining heat dissipation capabilities, including thermal resistance management and strategic placement of components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thick copper ceramic substrate is used for heat dissipation, then heat dissipation capability is improved, but loop inductance increases and wiring precision deteriorates
Solution Approach 1:
The patent employs a composite substrate structure combining ceramic material with embedded copper foil layers. The ceramic base plate provides thermal management capabilities while the embedded copper foils create precise electrical connection paths, resolving the contradiction between heat dissipation and wiring precision through material composition rather than thick copper layers
Solution Approach 2:
The ceramic base plate serves multiple functions simultaneously: it acts as a thermal management component for heat dissipation, provides mechanical support and insulation, and contains embedded copper foils that function as electrical connection paths. This multi-functionality eliminates the need for separate thick copper substrates while maintaining both thermal and electrical performance
2Ease of manufacture
If wire bonding is used for electrical connection, then ease of manufacture is improved, but loop inductance increases and switching speed deteriorates
Solution Approach 1:
The patent extracts and eliminates the wire bonding process from the electrical connection method. Instead of using external bonding wires that create large current loops, the electrical connections are formed through embedded copper foils within the ceramic substrate, directly removing the source of high loop inductance while maintaining manufacturing feasibility
Solution Approach 2:
The embedded copper foils act as an intermediary between the semiconductor devices and external connections. These foils provide low-inductance electrical pathways that mediate the connection without requiring external wire bonds, thus reducing loop inductance while keeping the manufacturing process manageable through standard ceramic fabrication techniques
3Temperature
If thick copper is used for insulation and heat conduction, then heat dissipation capability is improved, but loop inductance increases
Solution Approach 1:
The patent transitions from using thick copper layers (one-dimensional thickness increase) to embedding thin copper foils within the ceramic substrate (three-dimensional spatial distribution). This dimensional change allows heat dissipation through the ceramic's thermal conductivity while maintaining low inductance through the compact, embedded geometry of the copper connection paths
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces loop inductance, enabling high-power high-frequency operations and fully utilizing the advantages of third-generation semiconductors, thereby enhancing their performance and application potential.
Implementation Method 1
the insulating heat-conducting plate comprises an insulating heat-conducting layer, and an upper metal layer and a lower metal layer which are respectively arranged on the upper surface and the lower surface of the insulating heat-conducting layer
Data Source
AI summary
A high-frequency high-power packaging module comprises at least one power conversion bridge arm, at least one high-frequency capacitor, a circuit layer, an insulating heat-conducting plate, and a plastic package body. The front surface of the semiconductor power device is electrically connected with the first surface of the circuit layer, and the back surface of the semiconductor power device is thermally connected with or electrically connected with the lower surface of the insulating heat-conducting plate. The high-frequency capacitor is electrically connected with the first surface of the circuit layer or the second surface of the circuit layer or the lower surface of the insulating heat-conducting plate, and at least one electrode of the high-frequency capacitor is electrically connected with at least one electrode of the at least one semiconductor power device through the inner-layer electric connection layer.