Hybrid Substrate Selective Epitaxial Growth via Crystalline Orientation
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Solution Overview
Problem
Existing techniques for forming hybrid semiconductor substrates with different crystalline orientations are complex, costly, and prone to defects, as they require tight process windows and involve complex process technologies.
Innovation Solution
A method involving bonding substrates with different crystalline orientations, followed by selective epitaxial growth that forms high-quality epitaxial silicon only on specific surfaces, eliminating the need for dielectric layers and allowing for simpler, cost-effective manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If complex process technologies with tight process windows are used to form hybrid structures, then hybrid substrates with different crystalline orientations can be formed, but the manufacturing cost increases and process complexity increases
Solution Approach 1:
The patent extracts and removes the problematic dielectric layer that was previously necessary for selective epitaxial growth. By eliminating this intermediate layer, the process becomes simpler and more direct, allowing selective growth based solely on crystalline orientation without requiring complex dielectric patterning and removal steps
Solution Approach 2:
The patent changes the fundamental parameter of selective epitaxial growth from being dielectric-assisted to being crystalline-orientation-dependent. This parameter change allows the process to be controlled by the inherent properties of the silicon substrates rather than by external dielectric structures, simplifying the overall manufacturing process
2Adaptability or versatility
If complex process technologies with tight process windows are used to form hybrid structures, then hybrid substrates with different crystalline orientations can be formed, but manufacturing cost increases
Solution Approach 1:
The patent extracts and removes the problematic dielectric layer that was previously necessary for selective epitaxial growth. By eliminating this intermediate layer, the process becomes simpler and more direct, allowing selective growth based solely on crystalline orientation without requiring complex dielectric patterning and removal steps
Solution Approach 2:
The patent eliminates the need for expensive dielectric materials and complex processing equipment by using a method that relies on the inherent crystalline orientation of silicon substrates. This approach uses simpler, more cost-effective processes that are easier to manufacture at scale
3Manufacturing precision
If dielectric-assisted selective epitaxial growth is used, then epitaxial silicon can be formed on specific regions, but defects occur and process complexity increases
Solution Approach 1:
The patent extracts and removes the problematic dielectric layer that was previously necessary for selective epitaxial growth. By eliminating this intermediate layer, the process becomes simpler and more direct, allowing selective growth based solely on crystalline orientation without requiring complex dielectric patterning and removal steps
Solution Approach 2:
The patent uses crystalline orientation as a natural intermediary that inherently directs selective epitaxial growth. Instead of using artificial dielectric structures as mediators, the crystalline lattice structure itself serves as the guiding mechanism, ensuring precise and defect-free selective growth
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-quality, defect-free hybrid substrates with a wider process window, enabling the formation of hybrid substrates with superior characteristics at reduced costs, utilizing simpler polishing processes and avoiding defects associated with dielectric-assisted techniques.
Implementation Method 1
The first and second substrates are bonded together to thereby form a unitary hybrid substrate
Implementation Method 2
A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate
Data Source
AI summary
A first and a second substrate are bonded together to thereby form a unitary hybrid substrate. Predefined portions of the first substrate are removed to form openings in the first substrate through which surface regions of the second substrate are exposed. A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate but not from exposed surfaces of the first substrate. The epitaxial silicon formed from the exposed surfaces of the second substrate has the same crystalline orientation as the second substrate.