Hybrid Transistor Channel Segmentation for Leakage Control
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Solution Overview
Problem
Conventional transistors in volatile memory cells experience sub-threshold leakage current, leading to charge discharge over time, which requires frequent refreshing of memory cells and affects the design and fabrication of memory arrays.
Innovation Solution
The design and fabrication of hybrid transistors with a channel region made from a high bandgap low mobility material and source and drain regions made from low bandgap high mobility materials, which reduces gate-induced drain leakage and improves contact resistance and on-current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional transistors with uniform semiconductor material channels are used, then manufacturing is simpler, but off-state leakage current increases
Solution Approach 1:
The channel region is segmented into multiple sections with different semiconductor materials. Specifically, the channel includes a first section with a first semiconductor material and a second section with a second semiconductor material having different bandgaps. This segmentation allows optimization of both on-current (using high-bandgap material) and off-state leakage (using low-bandgap material in specific sections), resolving the contradiction between manufacturing simplicity and leakage control.
Solution Approach 2:
Different sections of the channel are assigned different material properties tailored to their specific functional requirements. The first section uses a first semiconductor material optimized for one aspect of performance, while the second section uses a second semiconductor material optimized for another aspect. This local differentiation of material quality enables simultaneous optimization of on-current and off-state leakage characteristics without requiring complete redesign of the entire channel.
2Device complexity
If conventional transistors are used in memory cells, then device structure is simpler, but charge retention deteriorates due to sub-threshold leakage
Solution Approach 1:
The channel is divided into multiple sections with different semiconductor materials, where each section contributes to different aspects of transistor performance. This segmentation enables the transistor to achieve both good on-current and low off-state leakage, thereby improving charge retention in memory cells without requiring overly complex device structures. The multi-section channel provides a balanced solution that maintains reasonable device complexity while significantly enhancing reliability.
3Ease of manufacture
If uniform bandgap materials are used in the channel, then fabrication is easier, but on-current is limited
Solution Approach 1:
The channel is segmented into multiple sections, each using semiconductor materials with different bandgaps optimized for specific functions. This segmentation allows the transistor to achieve high on-current through proper material selection in critical sections while maintaining fabrication processes that are not excessively complex. The multi-section approach enables optimization of on-current without requiring complete redesign of the fabrication process.
Solution Approach 2:
Different sections of the channel are assigned different material properties tailored to their specific functional requirements. This local optimization of material quality enables high on-current in sections where it is most needed while using simpler materials in sections where performance requirements are less demanding, thereby achieving high productivity without sacrificing fabrication ease.
4Object-generated harmful factors
If high-bandgap materials are used throughout the channel, then off-state leakage is reduced, but on-current and contact resistance worsen
Solution Approach 1:
The channel is divided into multiple sections with different semiconductor materials. Specifically, the first section uses a first semiconductor material and the second section uses a second semiconductor material with different bandgaps. This segmentation allows high-bandgap material to be used in sections where leakage control is critical, while low-bandgap material is used in sections where on-current and contact resistance are more important, thereby resolving the contradiction between reducing off-state leakage and maintaining good on-current characteristics.
Solution Approach 2:
Different sections of the channel are assigned different material properties tailored to their specific functional requirements. High-bandgap materials are applied locally in sections where leakage control is the priority, while low-bandgap materials are used in sections where on-current and contact resistance are more critical. This local differentiation of material quality enables simultaneous optimization of both off-state leakage reduction and on-current performance without requiring high-bandgap material throughout the entire channel.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid transistor configuration significantly reduces off-state leakage current, maintains charge stability in memory cells, and enhances the performance of memory devices by improving on-current and reducing the need for frequent refreshing.
Implementation Method 1
a channel region made from a high bandgap low mobility material
Implementation Method 2
source and drain regions made from low bandgap high mobility materials, which reduces gate-induced drain leakage and improves contact resistance and on-current
Data Source
AI summary
Semiconductor devices are disclosed. A semiconductor device may include a hybrid transistor configured in a vertical orientation. The hybrid transistor may include a gate electrode, a drain material, a source material, and a channel material operatively coupled between the drain material and the source material. The source material and the drain material include a first material, and the channel material includes a second, different material.