Hydrogen Barrier in Electroluminescence Displays
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Electroluminescence displays face degradation due to the diffusion of hydrogen particles from silicon nitride-based encapsulation layers, which can deteriorate the properties of oxide semiconductor materials, especially in narrow bezel structures where the path for external penetration is limited.
Innovation Solution
A patterned layer made of molybdenum and/or titanium is used to trap and suppress the diffusion of hydrogen particles, combined with a nitride insulating layer, to protect the oxide semiconductor elements and prevent moisture penetration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a nitride insulating layer is used to prevent moisture penetration, then moisture protection is improved, but hydrogen particles diffuse into the oxide semiconductor material causing deterioration
Solution Approach 1:
A protection layer made of molybdenum and/or titanium is introduced as an intermediary between the nitride insulating layer and the oxide semiconductor material. This protection layer acts as a mediator that blocks hydrogen particle diffusion while allowing the nitride layer to maintain its moisture protection function. The protection layer is formed to overlap with regions where hydrogen particles can diffuse from the nitride layer into the oxide semiconductor.
Solution Approach 2:
The patent employs a composite structure combining multiple materials with different functions: the nitride insulating layer provides moisture barrier properties, while the molybdenum/titanium protection layer provides hydrogen barrier properties. This composite material approach allows simultaneous protection against both moisture and hydrogen particles, resolving the contradiction between moisture protection and hydrogen prevention.
2Area of stationary object
If the bezel width is reduced to achieve narrow bezel structure, then device area is reduced, but the path for external penetration becomes limited making it harder to prevent hydrogen diffusion
Solution Approach 1:
The protection layer is strategically positioned in specific local regions where hydrogen diffusion paths exist, rather than uniformly covering the entire device. The protection layer overlaps with the nitride insulating layer in regions where hydrogen particles can diffuse from external environments into the oxide semiconductor material, providing targeted protection in the narrow bezel structure.
3Object-affected harmful factors
If the protection layer is formed to cover the nitride insulating layer, then hydrogen diffusion is blocked, but manufacturing complexity increases
Solution Approach 1:
The protective structure is segmented into functionally distinct layers: the nitride insulating layer for moisture protection and the molybdenum/titanium protection layer for hydrogen protection. Each layer is optimized for its specific function and can be formed using separate manufacturing processes, making the complex protection function achievable through modular layer formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively protects the oxide semiconductor material from hydrogen diffusion, maintaining the display's performance and extending its lifespan by creating a barrier against hydrogen penetration and moisture ingress.
Implementation Method 1
A patterned layer made of molybdenum and/or titanium is used to trap and suppress the diffusion of hydrogen particles
Implementation Method 2
combined with a nitride insulating layer, to protect the oxide semiconductor elements and prevent moisture penetration
Data Source
AI summary
An electroluminescence display having a robust structure against the penetration of hydrogen particles includes a substrate including a display area and a non-display area, the non-display area surrounding the display area; a light emitting element disposed in the display area; a gate driver disposed at the non-display area; a slit pattern overlapping with the gate driver; and a protection pattern overlapping with an empty space of the gate driver in the slit pattern, the slit pattern has a shape of a trench which is formed at a planarization layer covering the gate driver, and the protection pattern includes a same material as a part of the light emitting element and a part of the gate driver.