Solid-State Devices TRIZ Cases

Angle detection unit calculates sum of squares signals to estimate and subtract error components from magnetic sensor outputs.

A compressor circuit device uses a heat sink and aluminum plate to dissipate semiconductor heat through an insulating sheet.

Protective diodes couple gate to drain in integrated circuits to shunt electro-static discharge currents away from sensitive input transistors.

Transparent conductive electrode and front-side conductive regions bias the substrate to prevent electron trapping at interfaces.

Flip-chip bonding joins monolithic LEDs to active matrix panels, resolving device complexity versus illumination intensity trade-offs.

Inserting filler cells into gaps between circuit layout cells to alleviate mechanical stress effects.

Segmented reflecting walls in the pixel defining layer redirect stray light to increase emission rate while eliminating color mixing from adjacent regions.

An oxygen concentration gradient in a Sr3Si13Al3O2N21 crystal suppresses thermal quenching, maintaining green light balance and reducing color shifts.

Vertical line separation via insulating layers reduces crosstalk and stabilizes pixel luminance in high-resolution OLED devices.

Plasma fluorination modifies the surface of optical resin components to prevent particle contamination while maintaining material stability.

Surface activation treatment enables strong bonding of silicon wafers at low temperatures, preventing thermal strain and cracking during detachment.

A single patterning process forms source, drain, and pixel electrodes on one layer to simplify manufacturing steps.

Main group metal complexes serve as p-dopants in organic electronic matrix materials, improving electrical conductivity while maintaining optical transparency.

A phase change memory structure uses thermal disturbance-preventing parts to manage heat flow between electrodes.

Segmented microlens layers and an intermediate spacer resolve curvature radius control limits, boosting light absorption in image sensors.

A light-emitting element positions the emission zone centrally within the organic layer to control carrier recombination and maintain color purity.

A ladder-shaped gate line configuration segments wiring into distinct portions to reduce electrical resistance without increasing line width.

Condensers in concave lens containers focus external light onto a pixel defining layer with light absorbing material to reduce reflection.

A heat insulation layer with low thermal conductivity sits between the selector and magnetoresistive effect element to block heat transfer.

An oxide layer on the second electrode in the transmissive area improves light transmittance without reducing luminance.

Direct light irradiation on the organic material layer reduces energy losses and increases re-absorption rates for higher power conversion.

An n-channel metal-oxide field effect transistor integrates a high-voltage junction gate field-effect transistor within its source or drain edge.

Patterned SiOC film serves as a universal etching mask for alternating insulating and conductive layers in semiconductor manufacturing.

A black light-transmittance-reducing layer within the sealing film absorbs external light to minimize reflection.

A display panel uses a meshed shielding pattern to define pixel regions with low light-emitting device area ratios.

Vertical stacking of mold cavities doubles throughput without extending hardening time, resolving the trade-off between productivity and tool size.

Complementary surface topology on a temporary substrate encapsulates active layers, eliminating planarization steps and protecting electrical components.

Heat or light alters the solubility of a hole transport polymer, preventing lower layer dissolution during multilayer organic EL fabrication.

Moving touch signal lines into opening regions prevents interference with pixel defining regions, ensuring equal voltage application and eliminating color cast.

Layered sealing material applied at the sensor die and bonding material interfaces prevents moisture ingress that interferes with sensor operation.

Controlled silicone resin composition reduces gas permeability to prevent lead frame corrosion and maintain light intensity.

Isolation trenches segment photodiode cells to minimize inactive areas, resolving the trade-off between electrical isolation and light absorption efficiency.

A quantum dot photoconductor on silicon overcomes low infrared absorption in small pixels by separating electron-hole pairs efficiently.

Central metallic plated holes reduce positional tolerance and package size while maintaining electrical connections between stacked electronic packages.

A two-mask damascene scheme patterns noble metal electrodes using sacrificial material to define precise cross-point memory cell geometries.

Absorbing traces convert pulsed radiation into localized heat, enabling high-temperature thin film processing on cost-effective polyimide or PET substrates.

A segmented spacer anchors a sensor element to a substrate, reducing thermally induced stresses from differential expansion.

A photoelectric conversion apparatus uses a segmented semiconductor region and gate electrode to move signal charges efficiently.

Matching refractive indices of transparent conductive materials and inorganic insulation layers eliminates visible spot patterns caused by layer boundaries.

Digital exposure devices pattern photoresist layers using variable spot beams to define thin-film transistor electrodes without physical masks.

A hydrogen blocking layer prevents gas diffusion into oxide semiconductors, eliminating threshold voltage shifts caused by low-temperature deposition residues.

A substrateless semiconductor chip mounted on a high thermal conductivity carrier with a structured contact film for electrical connection.

Vapor-phase infiltration creates hybrid oxide-polymer layers that eliminate catalytic poisoning and precursor degradation during ZnO nanowire growth.

Automated apparatus tests image sensor packages using a lens and light source to detect defects before camera module assembly.

Light diffusion sheets redirect incident sunlight onto photovoltaic regions, resolving gaps that reduce light use efficiency and output.

A dynamic bias scheme charges dummy lines with over-drive voltage to accelerate edge sense line charging rates in flash memory arrays.

Segmented anti-oxidant conductive films isolate OLED electrodes, preventing short circuits and eliminating dark spots from uneven charge carrier distribution.

A refractive index difference in the overcoat film redirects stray light toward the black matrix, preventing color mixture between adjacent pixels.

Segmented carbon-doped high-k insulation layers prevent metal oxide crystallization, reducing leakage current and enabling easier dry etch processing.

Embedding a plug portion within the core insulating film prevents structural collapse during manufacturing while maintaining batch production efficiency.

Bonding adhesive fills electrode gaps to increase contact area, preventing flip-chip micro LED failures under thermal stress.

Segmented processing establishes TSV alignment during front-side filling, then completes conductive deposition on the back side to prevent substrate cracking.

Non-intersecting substrate trenches segment the CMOS image sensor substrate to block optical crosstalk and improve signal-to-noise ratio.

A thin film transistor array panel connects the common electrode to the common voltage line through a single contact hole.

Stacked fluorescent layers convert blue light to red and green spectra, improving color rendering index while managing heat efficiency.

A compound field effect transistor uses matched gates of varying lengths to achieve multiple pinch-off voltages.

Arc-shaped contact pads on a circular memory device resolve orientation misalignment by ensuring consistent probe contact during read operations.

A cross-linked polymer composition serves as a hole transport layer in organic light emitting devices.

Alternating titanium oxide and nitride layers form conformal nanolaminates, preventing crystallization to resolve minimum pitch constraints.

Alternating non-doped and boron-doped silicate glass layers enable selective trench etching for precise through-hole formation in stacked memory structures.

Dielectric spacers separate upper and lower source/drain portions on tall fins, preventing geometric merging and ensuring uniform dopant distribution.

A low-oxygen semiconductor pixel electrode enhances light transmission by removing insulation layers.

A nonvolatile memory controller monitors operation counts to trigger data reprogramming between subblocks.

A transparent wiring layer overlaps a transmission region in an organic light-emitting display device to maintain electrical connectivity.

A dielectric layer with conductive nanoparticles enables electrical connections between semiconductor substrates.

A mesh accommodation member holds a heat transfer member in the crucible, preventing splash and ensuring uniform vaporization of deposition material.

Nanostructures reflect specific visible light wavelengths to enhance photoelectronic conversion efficiency in semiconductor devices.

A two-stage programming method for memory cells reduces verify loop counts by ending the first stage before full verification.

Embedded micro-lenses confine incident light to photodiodes, resolving optical crosstalk caused by pixel size reduction.

Ink-jet printing deposits organic light emission layers across dual substrates to enable large-size displays.

Segmented wire layers resolve peeling risks while lowering resistance for high-resolution displays.

Wafer bonding decouples high-temperature memory fabrication from low-temperature CMOS interconnects, reducing signal delays and enabling copper integration.

Anisotropic dry etching shapes polysilicon gate electrodes to prevent short-circuiting between adjacent memory lines.

Matching lens areas to pixel electrode sizes resolves brightness unevenness and color balance trade-offs in organic electroluminescence displays.

A DEPFET transistor relocates the inner gate clear contact to the drain side, enabling signal electron extraction without overcoming source potential barriers.

A backside illuminated sensor uses a b-doped epi-sige layer to repair surface damage and enhance quantum efficiency.

Segmenting light emitting elements into stacks eliminates wavelength conversion layers, improving light efficiency and simplifying manufacturing.

A 3D NAND structure uses marker layers to define memory plug hole depth and diameter during etching.

Preliminary select gate deposition eliminates post-channel steps, reducing production time and improving channel film uniformity.

Mobile dopants drift between electrodes to modulate conductance, resolving limited performance adjustment capability.

A semiconductor memory structure uses a substituted dielectric layer and an unsubstituted flowable dielectric layer to isolate memory cells.

A metal-based anti-reflection board blocks light leakage from wire reflections, stabilizing the black level for accurate image processing.

Molybdenum and titanium layers trap hydrogen diffusion from nitride encapsulation, protecting oxide semiconductors in narrow bezel structures.

An MIS edge structure reduces leakage current and charge crowding in optoelectronic devices by modulating the internal electric field.

A laser beam processing method detects condensing spot positions by forming and imaging processed grooves on a workpiece.

Ion migration closes diffusion channels in the dielectric layer, eliminating moisture ingress defects that cause early organic optoelectronic component failure.

Protruding dielectric portions guide connection members to resolve the trade-off between increased reflecting surface area and mounting precision.

A display panel uses a filter group with non-overlapping wavelength ranges between white and color sub-pixel regions to block stray light.

Vertical nanosheet stacking increases device density while reducing short-channel effects.

An electrically conductive layer connected through electrode openings reduces sheet resistance to resolve luminance unevenness caused by high ITO resistivity.

A metal line separates polysilicon resistor bank regions to enable single level routing without additional interconnect layers.

Replacing transparent electrodes with a reflective metal layer improves image visibility in bright conditions while simplifying manufacturing steps.

Segmented transport layers with an internal reflection surface reduce device complexity while maintaining luminescence balance.

Nested substrate holes filled with adhesive layers bond sensor electrodes, resolving structural integrity versus signal transfer trade-offs.

Assigns image criteria to critical feature portions to determine optimized lithography parameters.

A display array substrate places sensing elements on one side of the base and switching devices on the opposite side.

A floating conductive pad connects source drain electrodes to pixel electrodes via an insulating layer contact hole.