Semiconductor Memory Through-Hole Etching via Segmented Glass Layers
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Solution Overview
Problem
The manufacturing of semiconductor memory devices with stacked structures faces challenges in creating through-holes in the alternating layers of electrode and insulating films, which hinders the formation of essential components like charge storage layers and conductive materials.
Innovation Solution
A method involving the alternation of Non-doped Silicate Glass (NSG) and Boron-doped Silicate Glass (BSG) films, with boron-doped polycrystalline silicon films, to form a stacked body where through-holes are created to facilitate the deposition of charge blocking, trap, and tunneling dielectric films, followed by the formation of channel semiconductors and conductive materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If through-holes are made in the stacked body of electrode films and insulating films, then semiconductor members can be filled and charge storage layers can be formed, but it is difficult to make such through-holes due to manufacturing complexity
Solution Approach 1:
The stacked body is segmented into different material layers (NSG and BSG films) with distinct etch selectivities. This segmentation allows selective removal of BSG layers through etching via trenches, enabling through-hole formation without directly patterning through the entire stacked structure, thus reducing manufacturing difficulty while maintaining precision
Solution Approach 2:
Trenches are formed in advance before creating the through-holes. These pre-formed trenches serve as pathways for subsequent etching processes, allowing BSG layers to be removed more easily and enabling through-hole formation with reduced manufacturing complexity
2Quantity of substance
If multiple electrode films and insulating films are alternately stacked to increase bit density, then higher storage capacity is achieved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent changes the material parameters of the insulating films by using different glass compositions (NSG and BSG) with distinct etch selectivities. This parameter change enables selective manipulation of specific layers within the stacked structure, simplifying the manufacturing process while maintaining the high bit density achieved through multiple stacking layers
Solution Approach 2:
The BSG films serve as intermediary sacrificial layers that facilitate the formation of through-holes and trenches. These intermediary layers are easily removable through selective etching, enabling complex structural modifications without directly manipulating the entire stacked structure, thus reducing manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for easier patterning of through-holes, enhances bit density, improves programming/erasing characteristics, and enables multi-level cell operations by concentrating the electric field effectively, while maintaining a compact structure and reducing the complexity of the manufacturing process.
Implementation Method 1
improves programming/erasing characteristics, and enables multi-level cell operations by concentrating the electric field effectively
Data Source
AI summary
According to one embodiment, a method for manufacturing a semiconductor memory device, includes forming a stacked body on a substrate by alternately stacking a first insulating film and a second insulating film, making a through-hole extending in a stacking direction of the first insulating film and the second insulating film to pierce the stacked body, forming at least a portion of a blocking insulating film, a charge trap film, and a tunneling dielectric film of a MONOS on an inner surface of the through-hole, forming a channel semiconductor on the tunneling dielectric film, making a trench in the stacked body, removing the second insulating film by performing etching via the trench, and filling a conductive material into a space made by the removing of the second insulating film.