Single Patterning Process for TFT Backplane Electrodes

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Solution Overview

Problem

The manufacturing process of thin film transistor driving backplanes for AMOLED panels requires multiple patterning processes, making it costly and complex, as the source, drain, and pixel electrodes need separate formation, which increases the number of steps and expenses.

Innovation Solution

A method where the electrode layer is designed to form source, drain, and pixel electrodes integrally with the drain electrode in a single patterning process, reducing the number of steps and complexity, and enhancing the reliability of the structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple patterning processes are used to form source, drain, and pixel electrodes separately, then the electrodes can be formed with precise patterns, but the manufacturing cost increases and the process complexity increases

Engineering Contradiction:
Improveelectrode pattern precisionVSAvoidpatterning process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines the formation of source electrode, drain electrode, and pixel electrode into a single patterning process by designing a unified electrode structure where the drain electrode and pixel electrode are integrally formed. This merging of multiple electrode formation steps into one process reduces process complexity while maintaining the required pattern precision through careful structural design.

Inventive Principle:
Principle #5Merging (Combining)

2Manufacturing precision

If multiple patterning processes are used to form source, drain, and pixel electrodes separately, then the electrodes can be formed with precise patterns, but the manufacturing cost increases

Engineering Contradiction:
Improveelectrode pattern precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent merges multiple electrode formation operations into a single patterning process, directly reducing the number of manufacturing steps and associated costs. The unified electrode structure allows source, drain, and pixel electrodes to be formed simultaneously, eliminating the need for multiple separate patterning processes and their associated material and equipment costs.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If source, drain, and pixel electrodes are formed in separate layers through multiple patterning processes, then the electrodes can be formed independently, but the backplane thickness increases and the manufacturing process becomes more complex

Engineering Contradiction:
Improveelectrode formation flexibilityVSAvoidbackplane thickness
Core Design Contradiction:
Adaptability or versatilityVSLength of stationary object

Solution Approach 1:

The patent merges multiple electrode layers into a single integrated electrode structure, reducing the overall backplane thickness. By forming source, drain, and pixel electrodes in the same layer through one patterning process, the patent eliminates the cumulative thickness of multiple separate electrode layers while maintaining the functional independence of each electrode through their integral structural design.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9543415B2Thin film transistor driving backplane and manufacturing method thereof, and display panel
Publication Date: 2017.01.10 BOE TECHNOLOGY GROUP CO LTD
  • US9543415B2 patent drawing
  • US9543415B2 patent drawing
  • US9543415B2 patent drawing

AI summary

The embodiments of the present invention provide a thin film transistor driving backplane and a manufacturing method thereof, and a display panel. The manufacturing method may comprise: manufacturing a backplane base disposed with a plurality of active device structures; disposing an electrode layer on the backplane base; and manufacturing the electrode layer into a source electrode, a drain electrode and a pixel electrode integrally disposed with the drain electrode by one patterning process. According to the embodiment of the present invention, the electrode layer is manufactured into a plurality of source electrodes, drain electrodes and pixel electrodes, integrally disposed with the drain electrode, by one time patterning process, so that the source electrode, the drain electrode and the pixel electrode are all at the same electrode layer, and the source electrode, the drain electrode and the pixel electrode whose formation needs two patterning processes in the existing method, is simplified to one time patterning process, so it reduces the thickness of the thin film transistor driving backplane, simplifies the manufacturing step, and saves the manufacturing cost.