Low-Oxygen Semiconductor Pixel Electrode for Display Illumination
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Solution Overview
Problem
Conventional electroluminescent devices face issues with insufficient illumination intensity and color shift due to the presence of multiple insulation layers between the pixel electrode and the substrate, which complicates the fabrication process and increases costs.
Innovation Solution
A simplified fabrication method for a pixel structure that forms a semiconductor channel layer and metal oxide regions to create a pixel electrode with lower oxygen content, reducing the number of insulation layers and allowing direct exposure to light, thereby enhancing illumination intensity and minimizing color shift.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If multiple insulation layers are placed between the pixel electrode and substrate, then the fabrication process can be simplified, but the illumination intensity becomes insufficient and color shift occurs
Solution Approach 1:
The patent changes the material parameter of the pixel electrode from conventional transparent conductive oxide (ITO) to a low-oxygen-content semiconductor material (such as tin oxide or zinc oxide with oxygen content below 10 at%). This parameter change enables the pixel electrode to simultaneously achieve high transparency for light emission and direct contact capability with the substrate, eliminating the need for multiple insulation layers while maintaining fabrication simplicity and improving illumination intensity
Solution Approach 2:
The patent applies local quality by creating different oxygen content regions within the semiconductor material layer. The pixel electrode region has low oxygen content (high transparency) while other regions may have different properties. This localized differentiation allows the same material layer to serve multiple functions: as a transparent electrode and as a structure that can directly contact the substrate without requiring insulation layers
2Reliability
If multiple insulation layers are placed between the pixel electrode and substrate, then the device structure is more complete, but the fabrication cost increases
Solution Approach 1:
The patent extracts and removes the unnecessary insulation layers from the device structure. By using a low-oxygen-content semiconductor material as the pixel electrode, the structure naturally achieves both electrical functionality and structural integrity without requiring additional insulation layers, thereby reducing fabrication steps and costs while maintaining device reliability
Solution Approach 2:
The low-oxygen-content semiconductor material serves multiple functions simultaneously: it acts as the pixel electrode for electrical conduction, provides structural support, and enables direct substrate contact for light emission. This multi-functionality eliminates the need for separate insulation layers, reducing fabrication complexity and cost while maintaining complete device structure
3Ease of manufacture
If multiple insulation layers are placed between the pixel electrode and substrate, then the device can be manufactured with standard processes, but the display performance deteriorates due to color shift
Solution Approach 1:
The patent changes the chemical composition parameter of the pixel electrode material, specifically controlling the oxygen content to be below 10 at% (preferably 1-5 at%). This parameter change fundamentally alters the material's optical properties, achieving high transparency across the visible spectrum and eliminating color shift, while the material remains compatible with standard semiconductor fabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in improved illumination intensity and reduced color shift in electroluminescent devices by eliminating unnecessary insulation layers and simplifying the fabrication process, leading to lower fabrication costs and better display performance.
Implementation Method 1
The at least one partial region of the pixel pattern exposed by the pixel opening is modified to form a pixel electrode electrically connected to the drain electrode. The channel layer and the pixel electrode include a semiconductor material layer, in which the oxygen content of the pixel electrode is lower than the oxygen content of the channel layer.
Data Source
AI summary
A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.