OLED High-k Insulation Layer Segmentation for Leakage Current
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Solution Overview
Problem
In organic light emitting display (OLED) devices, high dielectric constant insulation layers with large thicknesses face challenges such as increased leakage current due to metal oxide crystallization and difficulty in performing dry etch processes due to high bond energy, which affect capacitor performance and manufacturing efficiency.
Innovation Solution
The implementation of a multi-layered structure comprising carbon-doped high-k insulation layers and ammonia layers, where the carbon-doped amorphous zirconium oxide layers are formed with a high dielectric constant and a thickness greater than the ammonia layers, enhancing breakdown voltage and reducing leakage current, while allowing for easier dry etch processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the high-k insulation layer is manufactured with relatively large thickness, then the breakdown voltage characteristic is improved, but the leakage current increases due to metal oxide crystallization
Solution Approach 1:
The high-k insulation layer is divided into multiple thin layers (first high-k insulation layer, second high-k insulation layer, etc.) with low-k insulation layers interspersed between them. This segmentation prevents crystallization in any single layer while maintaining overall thickness for high breakdown voltage, thereby reducing leakage current.
Solution Approach 2:
The patent creates a composite insulation structure combining high-k metal oxide layers (for high breakdown voltage) with low-k insulation layers (for preventing crystallization and reducing leakage). This composite approach allows the structure to simultaneously achieve high reliability and low leakage current.
2Reliability
If the high-k insulation layer has relatively large thickness, then the capacitor capacity is improved, but the dry etch process becomes difficult due to high bond energy
Solution Approach 1:
By segmenting the thick high-k insulation layer into multiple thinner layers separated by low-k layers, each individual layer becomes easier to etch while the cumulative thickness maintains the required capacitor capacity. The etch process can effectively remove each thin layer without the difficulties associated with etching a single thick layer.
3Reliability
If the high-k insulation layer is made with large thickness, then the capacitor performance is improved, but the manufacturing efficiency decreases due to process difficulty
Solution Approach 1:
The multi-layer structure with thinner individual layers improves manufacturability and etchability, thereby increasing production efficiency while maintaining the total thickness required for high capacitor performance.
Solution Approach 2:
The patent changes the structural parameters from a single thick layer to multiple thin layers, which fundamentally alters the manufacturing characteristics and improves processability without compromising the electrical performance requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves the breakdown voltage and reduces leakage current in capacitors, preventing short circuits and facilitating the dry etch process by reducing bond energy, thereby enhancing the overall performance and manufacturing efficiency of OLED devices.
Implementation Method 1
high dielectric constant (hereinafter 'high-k') insulation layer
Implementation Method 2
since the high-k insulation layer has a relatively large bond energy, it is difficult that a dry etch process is performed
Implementation Method 3
a metal oxide, which is an ingredient or a component material of the dielectric layer, may be crystallized
Data Source
AI summary
An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.