SiOC Film Mask for Multi-Layer Semiconductor Etching
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Solution Overview
Problem
Existing methods for manufacturing semiconductor devices with three-dimensionally arranged memory cells face challenges in productivity due to the need for multiple etching masks and low etching resistance, leading to inefficient hole formation and device characteristic fluctuations.
Innovation Solution
A method involving the alternate stacking of insulating and conductive layers, with a SiOC film serving as a common etching mask, allows for simultaneous etching of both layers using plasma etching techniques, reducing mask consumption and maintaining uniform hole dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple etching masks are used to etch insulating layers and conductive layers separately, then etching selectivity is improved, but device complexity and manufacturing time increase
Solution Approach 1:
The SiOC film serves as a universal etching mask for both insulating layers (containing SiO2) and conductive layers (containing Si), replacing the need for separate masks. The mask material is designed to provide sufficient etching resistance against both layer types through its specific composition ratio (Si:O:C = 100:20-80:0-80 atomic%), enabling single-mask multi-layer etching
Solution Approach 2:
The invention uses a composite SiOC film mask material containing silicon oxide and carbon components. This composite structure provides both the etching resistance needed for selective etching and the material properties required for forming perpendicular side walls, while maintaining compatibility with both insulating and conductive layer etching processes
2Ease of manufacture
If conventional mask materials are used with low etching resistance, then ease of manufacture is improved, but manufacturing precision deteriorates due to hole dimension variations
Solution Approach 1:
The invention optimizes the composition parameters of the mask film by controlling the Si:O:C atomic ratio (100:20-80:0-80) to achieve the desired etching resistance. By adjusting these compositional parameters, the mask provides sufficient resistance against both insulating and conductive layer etching while maintaining manufacturability through standard CVD processes
Solution Approach 2:
The invention replaces mechanical/physical mask materials with a chemically optimized SiOC film that provides etching resistance through its compositional properties rather than physical thickness alone. This chemical resistance mechanism enables precise hole formation without the dimensional variations that plague conventional thin mask materials
3Ease of operation
If etching resistance is insufficient, then ease of operation is improved, but productivity decreases due to inefficient hole formation
Solution Approach 1:
The SiOC mask film provides universal etching resistance for both insulating and conductive layers in a single mask layer, enabling efficient simultaneous or sequential etching of multiple layers without requiring mask changes or additional mask formation steps, thereby improving productivity
Solution Approach 2:
The composite SiOC film combines silicon oxide for structural stability and carbon for etching resistance, creating a mask material that efficiently resists etching of both insulating (SiO2-based) and conductive (Si-based) layers, enabling high-speed plasma etching processes
4Ease of manufacture
If mask consumption is high during etching, then ease of manufacture is improved, but loss of substance increases and productivity decreases
Solution Approach 1:
By optimizing the Si:O:C atomic ratio parameters of the mask film, the invention achieves maximum etching resistance with minimal mask thickness (50-200 nm). This parameter optimization reduces mask material consumption while maintaining sufficient resistance against etching of both insulating and conductive layers throughout the multi-layer etching process
Solution Approach 2:
The invention replaces thick mechanical mask layers with a thin chemically-resistant SiOC film whose etching resistance derives from its compositional properties rather than physical thickness. This substitution dramatically reduces mask material consumption while maintaining etching protection functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances productivity by reducing mask consumption and maintaining uniform hole dimensions, suppressing device characteristic fluctuations and improving etching efficiency, while allowing for the formation of memory holes with perpendicular side walls.
Implementation Method 1
the SiOC film has higher etching resistance than a silicon oxide film
Implementation Method 2
make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask
Data Source
AI summary
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask.