Hydrogen-Doped Solvent SAM Formation in Nano-Gaps

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Solution Overview

Problem

Forming a uniform self-assembled monolayer (SAM) in nano-gaps between metal electrodes is challenging due to oxidation issues, which prevents the formation of a functional organic layer necessary for low-power semiconductor devices.

Innovation Solution

A manufacturing method involving the use of hydrogen gas-doped solvents and etching liquids to prevent oxidation during the formation of nano-gaps, allowing for the deposition of a uniform organic layer between metal electrodes, using techniques like Atomic Layer Deposition and controlled atmosphere processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional methods are used to form nano-gaps between metal electrodes, then the gap structure is formed, but metal oxidation occurs and prevents uniform SAM formation

Engineering Contradiction:
Improveuniformity of self-assembled monolayerVSAvoidmetal oxidation
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent applies inert atmosphere by filling the nano-gap with a solvent that creates an oxygen-excluded environment during SAM formation. The solvent fills the gap completely and prevents oxygen from reaching the metal surfaces, thereby preventing metal oxidation while enabling uniform SAM formation. This resolves the contradiction by creating a protective inert environment exactly where needed.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

Solution Approach 2:

The patent uses the solvent as an intermediary substance that serves dual functions: it fills the nano-gap to prevent oxygen access (protecting against oxidation) and simultaneously provides the medium necessary for SAM formation. The solvent acts as a mediator between the metal electrodes and the organic molecules, enabling controlled assembly without harmful oxidation.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the nano-gap is filled with solvent to prevent oxidation, then metal oxidation is suppressed, but the gap filling process becomes more complex

Engineering Contradiction:
Improveprevention of metal oxidationVSAvoidcomplexity of gap filling process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs self-service by utilizing the solvent's own properties to achieve gap filling and oxidation prevention without requiring additional complex equipment or multi-step processes. The solvent naturally fills the nano-gap through capillary action and remains in place during SAM formation, providing self-contained protection against oxidation while simplifying the overall process.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively suppresses metal oxidation, enabling the formation of a uniform organic layer within the nano-gaps, enhancing the insulation and switching characteristics of the functional element, such as memory cells, by preventing the formation of metal oxides that clog the gaps.

Implementation Method 1

a portion between a first electrode and a second electrode formed facing the first electrode is filled with a solvent doped with hydrogen gas

Methodology Applied
Scientific EffectHydrogenation: Hydrogenation

Implementation Method 2

by forming a self-assembled monolayer (SAM) between metal portions facing each other via a so-called nano-gap

Methodology Applied
Scientific EffectSelf-Assembly: Self-Assembly

Implementation Method 3

form an organic layer containing the organic molecules between the first electrode and the second electrode

Methodology Applied
Scientific EffectAdsorption: Adsorption

Data Source

PatentUS9065064B2Manufacturing method and manufacturing apparatus of functional element
Publication Date: 2015.06.23 KIOXIA CORP
  • US9065064B2 patent drawing
  • US9065064B2 patent drawing
  • US9065064B2 patent drawing

AI summary

According to one embodiment, the manufacturing method of a functional element includes filling a solvent comprising hydrogen gas and having organic molecules dispersed therein into a gap between the first electrode and the second electrode formed facing the first electrode, and forming an organic layer containing the organic molecules mentioned above between the first electrode and the second electrode.