Hydrogen Plasma Residue Removal for Semiconductor Substrates
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Solution Overview
Problem
Conventional methods for removing residue from semiconductor substrates during microelectronic device fabrication are inefficient, often requiring multiple wet treatments and oxygen-based plasma strip processes that can form hard-to-remove metal oxides and corrode the substrate, leading to productivity issues and short-circuits in integrated circuits.
Innovation Solution
A method involving exposure of the substrate to a hydrogen-based plasma to remove metallic residues, which may include hydrogen, nitrogen, water vapor, and argon, either in a plasma or non-plasma state, to control corrosion and effectively remove post-etch residues from metal-containing layers like aluminum or copper, while maintaining the substrate in a process chamber used for etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If oxygen-based plasma strip process is used to remove residue, then residue removal is achieved, but substrate corrosion and metal oxide formation occur
Solution Approach 1:
The patent changes the chemical composition parameter of the plasma process gas from oxygen-based to hydrogen-based chemistry. This fundamental parameter change transforms the removal mechanism while eliminating the harmful oxidation side reactions that cause substrate corrosion and metal oxide formation.
Solution Approach 2:
The patent employs a hydrogen-based plasma environment that creates a reducing atmosphere rather than an oxidizing one. This inert-like environment protects the substrate from corrosion while still enabling effective residue removal through hydrogen-driven chemical reactions.
2Manufacturing precision
If multiple wet treatments and plasma strip processes are used to remove residue, then residue removal is achieved, but productivity decreases
Solution Approach 1:
The patent combines the residue removal function into a single plasma process step using hydrogen-based chemistry, eliminating the need for separate wet treatment steps. This merging of functions reduces process complexity and increases productivity while maintaining effective residue removal.
Solution Approach 2:
The hydrogen-based plasma process provides continuous and effective residue removal in a single sustained process step, replacing the intermittent multiple treatment steps. This continuity eliminates idle time between treatments and improves overall process efficiency.
3Manufacturing precision
If oxygen-based plasma strip process is used to remove residue, then residue removal is achieved, but process complexity increases
Solution Approach 1:
The patent extracts the harmful oxygen component from the plasma process gas composition and replaces it with hydrogen-based chemistry. This extraction of the problematic element simplifies the overall process by eliminating the need for subsequent corrosion prevention steps and metal oxide removal operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves corrosion control, increases productivity by reducing process time, and provides a wider window for residue removal, compared to oxygen-based and water vapor-based processes, while minimizing substrate corrosion and enhancing the consistency of the process.
Implementation Method 1
exposing the substrate to a hydrogen-based plasma to remove the metallic residue
Implementation Method 2
hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor
Data Source
AI summary
A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).