Hydrogen-Diffused Semiconductor Stack for Source-Drain Conductivity
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Solution Overview
Problem
Existing semiconductor materials in integrated assemblies do not effectively differentiate conductivity between channel and source/drain regions, limiting the performance of transistors and memory cells.
Innovation Solution
The use of hydrogen diffusion to increase the conductivity of specific semiconductor materials in source/drain regions while maintaining low conductivity in channel regions, achieved by forming a stack of different semiconductor materials with hydrogen annealing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the same semiconductor material is used for both channel and source/drain regions, then the manufacturing process is simple, but the conductivity differentiation between channel and source/drain regions is insufficient
Solution Approach 1:
The patent divides the semiconductor structure into distinct regions with different materials: a first semiconductor material for the channel region and a second semiconductor material for the source/drain regions. This segmentation allows each region to have optimized electrical properties, with the source/drain regions exhibiting substantially increased conductivity compared to the channel region, thereby resolving the contradiction between manufacturing simplicity and conductivity differentiation.
Solution Approach 2:
The patent applies different semiconductor materials to different spatial locations within the same device structure. The first semiconductor material is used in the channel region where controlled conductivity is needed, while the second semiconductor material is used in the source/drain regions where high conductivity is required. This local quality approach enables tailored electrical characteristics for each functional region while maintaining a unified device architecture.
2Reliability
If hydrogen diffusion is applied to increase source/drain conductivity, then source/drain conductivity increases significantly, but channel conductivity may also increase unintentionally
Solution Approach 1:
The patent uses hydrogen diffusion in combination with a mask structure to achieve selective conductivity enhancement. The mask is positioned to cover the channel region during hydrogen diffusion, allowing hydrogen to penetrate only the source/drain regions made of the second semiconductor material. This localized hydrogen diffusion increases source/drain conductivity while preserving the electrical characteristics of the channel region, thereby achieving precise conductivity control.
Solution Approach 2:
The patent introduces a mask as an intermediary element during the hydrogen diffusion process. This mask acts as a selective barrier that permits hydrogen diffusion into the source/drain regions while blocking the channel region. The mask enables precise spatial control of the hydrogen diffusion process, ensuring that conductivity enhancement occurs only where needed without affecting adjacent regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the conductivity of source/drain regions by at least a factor of 10 compared to the channel region, improving the performance and functionality of transistors and memory cells.
Implementation Method 1
Hydrogen is diffused within the first, second and third semiconductor materials. The second and third semiconductor materials have substantially increased conductivity as compared to the first semiconductor material in response to the hydrogen diffused therein.
Data Source
AI summary
Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.