Integrated Circuit Cell Layout With 1.5-Row Standard Cells
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Solution Overview
Problem
Existing layout techniques for integrated circuits in advanced technology nodes face a trade-off between speed/leakage and packing density, with process issues arising from transitions between different cell types, leading to reduced efficiency and increased complexity.
Innovation Solution
A layout technique that includes placing first cells across 1.5 cell rows with flexible channel widths and second cells across 1 cell row, allowing for increased packing density and reduced transition breaks between channels, using a combination of single height and one-half height PPNN cells with dummy regions to enhance layout flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If standard cell methodologies are used to integrate more devices on a single chip, then production efficiency increases and costs lower, but layout complexity and process issues increase due to transitions between different cell types
Solution Approach 1:
The patent segments the layout into different cell types (first cells and second cells) with distinct configurations. First cells have channels extending across full cell rows while second cells have channels extending across half cell rows. This segmentation allows each cell type to be optimized for specific functions, reducing overall layout complexity while maintaining high device integration density.
Solution Approach 2:
The patent applies local quality by assigning different channel configurations to different regions of the circuit layout. Areas requiring high speed performance use first cells with full-channel coverage, while areas where leakage control is prioritized use second cells with half-channel coverage. This localized optimization resolves the contradiction between overall productivity and local layout complexity.
2Adaptability or versatility
If transitions between different cell types are made, then layout flexibility improves, but process issues and transition breaks increase
Solution Approach 1:
The patent introduces dummy regions as intermediary structures between first cells and second cells. These dummy regions act as mediators that smooth the transition between different cell types, eliminating abrupt channel width changes and reducing process issues. The dummy regions maintain signal integrity while allowing flexible layout transitions.
3Quantity of substance
If channel widths are increased to improve packing density, then device integration increases, but leakage current increases
Solution Approach 1:
The patent creates a dynamic layout system where channel widths can be adjusted based on functional requirements. First cells use wider channels across full cell rows for high-speed paths, while second cells use narrower channels across half cell rows for low-leakage paths. This dynamic adaptation allows the layout to optimize the trade-off between packing density and leakage current on a per-region basis.
Data Source
AI summary
A semiconductor device includes: an area formed on a substrate and organized into a plurality of cell rows extending along a first direction; a first cell disposed across a first one of the plurality of cell rows, the first cell having a first height along a second direction perpendicular to the first direction; and a second cell disposed across a second one and half of a third one of the plurality of cell rows, the second cell having a second height. The first cell essentially consists of a first active region with a first conductivity and a second active region with a second conductivity. The second cell essentially consists of a third active region with the first conductivity and a fourth active region with the second conductivity. The second height is 1.5 times as high as the first height.