Multi-Gate IC Cell Layout With Column-Stacked Pins

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Solution Overview

Problem

Designing integrated circuits (ICs) to optimize area usage while accommodating multiple logic gates and pins is challenging, particularly in technology nodes where the column polysilicon pitch (CPP) to metal pitch (M1) ratio affects the implementation of multi-gate cells, leading to inefficiencies in footprint and pin arrangement.

Innovation Solution

The integration of a multi-gate IC cell design with column or vertically stacked pins, where multiple logic gates share a common source region and pins are positioned on metal tracks directly over this region, allowing for efficient use of space and accommodating the required number of pins within the available metal tracks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If multiple logic gates are arranged in rows and columns to optimize area usage, then the IC footprint is reduced and functionality is increased, but the pin arrangement becomes complex and difficult to implement

Engineering Contradiction:
ImproveIC footprintVSAvoidpin arrangement complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent applies dimensionality change by transitioning from a traditional planar pin arrangement to a three-dimensional columnar structure. Multiple pins are stacked vertically in columns above specific locations on the IC, allowing multiple I/O connections to be achieved within a compact footprint while simplifying the routing architecture.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent merges multiple pin functions into shared columnar structures. Multiple logic gates can share common pin columns, reducing the total number of discrete pin locations required and simplifying the overall pin arrangement complexity while maintaining area efficiency.

Inventive Principle:
Principle #5Merging (Combining)

2Manufacturing precision

If the column polysilicon pitch (CPP) to metal pitch (M1) ratio is optimized for multi-gate cells, then manufacturing precision is improved, but the pin arrangement becomes less adaptable to different technology nodes

Engineering Contradiction:
ImproveCPP to M1 pitch ratioVSAvoidpin arrangement adaptability
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent creates a universal pin arrangement architecture where columnar pin structures can be adapted across different technology nodes and logic gate configurations. The same basic columnar pin concept works for various CPP to M1 pitch ratios, making the design versatile and adaptable to different manufacturing processes and technology generations.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent introduces dynamic adaptability in the pin arrangement, allowing the configuration and spacing of columnar pins to be adjusted based on specific technology node requirements. This enables the same fundamental architecture to maintain manufacturing precision across varying CPP to M1 pitch ratios by optimizing pin column spacing and positioning for each technology node.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20240170488A1Integrated circuit cell including column stacked pins
Publication Date: 2024.05.23 QUALCOMM INC
  • US20240170488A1 patent drawing
  • US20240170488A1 patent drawing
  • US20240170488A1 patent drawing

AI summary

An integrated circuit (IC) cell including: a first logic gate comprising a first polysilicon structure and a first pin; a second logic gate comprising a second polysilicon structure and a second pin, wherein the second polysilicon structure is spaced apart and adjacent to the first polysilicon structure in a cell row direction; and a source region, common to the first and second logic gates, situated between the first and second polysilicon structures, wherein the first and second pins are on a first metal track directly over the common source region.