IC Package Stack Separation Using Chemical Dielectric Removal
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Solution Overview
Problem
The challenge in semiconductor packaging is the need for smaller and more reliable packaging techniques as integration density increases, with existing mechanical processes risking damage to integrated circuit packages and potential cracks in gap-filling dielectrics.
Innovation Solution
Utilizing a chemical removal process to separate gap-filling dielectrics, reducing the risk of cracks and improving the reliability of integrated circuit packages by avoiding mechanical damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mechanical processes are used to separate gap-filling dielectrics, then productivity is improved, but manufacturing precision deteriorates due to cracks in gap-filling dielectrics
Solution Approach 1:
The patent replaces mechanical separation processes with a chemical etching process to remove gap-filling dielectrics. This substitution eliminates the mechanical stresses and forces that cause cracking in the dielectric material, thereby maintaining manufacturing precision while still achieving the required productivity for package separation.
Solution Approach 2:
The patent changes the physical-chemical parameters of the separation process by using chemical etchants with specific selectivity ratios. By controlling etch selectivity between the gap-filling dielectric and surrounding materials, the process achieves precise removal without damaging adjacent structures, resolving the contradiction between efficient removal and dielectric integrity.
2Productivity
If mechanical processes are used to separate gap-filling dielectrics, then productivity is improved, but reliability deteriorates due to potential cracks
Solution Approach 1:
The patent replaces mechanical separation processes with a chemical etching process to remove gap-filling dielectrics. This substitution eliminates the mechanical stresses and forces that cause cracking in the dielectric material, thereby maintaining manufacturing precision while still achieving the required productivity for package separation.
Solution Approach 2:
The patent introduces chemical etchants as an intermediary substance to facilitate the separation process. These etchants selectively dissolve the gap-filling dielectric material without physically contacting or stressing the surrounding package structures, thereby preventing crack formation and improving reliability while maintaining productivity.
3Reliability
If chemical removal process is used to separate gap-filling dielectrics, then reliability is improved, but productivity deteriorates due to process time
Solution Approach 1:
The patent changes the physical-chemical parameters of the separation process by using chemical etchants with specific selectivity ratios. By controlling etch selectivity between the gap-filling dielectric and surrounding materials, the process achieves precise removal without damaging adjacent structures, resolving the contradiction between efficient removal and dielectric integrity.
Solution Approach 2:
The patent employs preliminary process steps such as forming protective masks and selecting etchants with optimized kinetics before the actual removal process. These preliminary actions are designed to enable faster, more selective etching that achieves reliable separation without compromising productivity, balancing reliability improvements with manufacturing throughput.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The chemical process enhances the reliability of integrated circuit packages by minimizing cracks in gap-filling dielectrics, ensuring consistent performance during testing and operation.
Implementation Method 1
a chemical removal process is utilized to separate the gap-filling dielectrics of adjacent integrated circuit packages
Data Source
AI summary
In an embodiment, a device includes: a first integrated circuit die; a second integrated circuit die bonded to the first integrated circuit die in a face-to-back manner; a dummy semiconductor feature adjacent the second integrated circuit die and bonded to the first integrated circuit die; a support substrate attached to the dummy semiconductor feature and the second integrated circuit die; and a passivation layer extending along a top surface of the support substrate, an outer sidewall of the dummy semiconductor feature, an outer sidewall of the first integrated circuit die, and a top surface of the first integrated circuit die.


