IC Package Interconnect Layout for Heat and Power Distribution

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving efficient heat dissipation and power distribution in integrated circuit packages due to the limitations of existing packaging techniques, which hinder the integration of smaller and more complex electronic components.

Innovation Solution

The integration of a back-side interconnect structure with high metal density and a redistribution structure, combined with a high thermal conductivity underfill, facilitates improved heat dissipation and power distribution by allowing for efficient heat transfer within the package component.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional packaging techniques are used, then manufacturing simplicity is maintained, but heat dissipation efficiency deteriorates

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidpackage structure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The package structure is divided into distinct functional layers: a substrate, a first interconnect structure with first metal density, a second interconnect structure with second metal density, and a device layer. This segmentation allows each layer to be optimized independently for its specific function, enabling improved heat dissipation through targeted metal density variations without requiring complete redesign of the entire package.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different metal densities are applied to different interconnect structures based on local requirements. The first interconnect structure has a first metal density optimized for its specific region, while the second interconnect structure has a second metal density optimized for its region. This local quality approach allows heat dissipation to be enhanced in specific areas where it is most needed, rather than uniformly across the entire package.

Inventive Principle:
Principle #3Local quality

2Power

If metal density in interconnect structures is increased, then power distribution efficiency is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvepower distribution efficiencyVSAvoidmanufacturing complexity
Core Design Contradiction:
PowerVSEase of manufacture

Solution Approach 1:

The power distribution network is segmented into multiple interconnect structures with different metal densities. This allows high metal density (and thus high power distribution efficiency) to be implemented only in specific interconnect structures where it is most beneficial, rather than requiring high metal density throughout the entire package, thereby reducing overall manufacturing complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

High metal density is applied locally to specific interconnect structures where power distribution efficiency is most critical, while other interconnect structures may have lower metal density. This localized approach to power distribution optimizes performance in key areas without unnecessarily increasing manufacturing complexity across the entire package.

Inventive Principle:
Principle #3Local quality

3Productivity

If feature size is reduced to increase integration density, then component integration is improved, but heat dissipation becomes more difficult

Engineering Contradiction:
Improveintegration densityVSAvoidheat dissipation capability
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

Rather than relying solely on planar heat dissipation paths, the invention utilizes vertical dimensionality by implementing multiple interconnect structures at different levels (first interconnect structure, second interconnect structure, device layer). This multi-layer approach creates additional heat dissipation pathways in the vertical dimension, enabling effective heat management even as horizontal feature sizes are reduced to increase integration density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

Metal density is optimized in specific interconnect structures to enhance heat dissipation locally in areas where high integration density creates heat accumulation challenges. This allows targeted thermal management in regions with highest component density without requiring uniform changes across the entire package.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances thermal properties, efficiency, and reliability of integrated circuit packages by effectively managing heat and power distribution, supporting the integration of smaller and more complex electronic components.

Implementation Method 1

an underfill between the package component and the package substrate, wherein the underfill has a thermal conductivity that is greater than 10 W/m·K

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250357257A1Integrated circuit packages and methods of forming the same
Publication Date: 2025.11.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250357257A1 patent drawing
  • US20250357257A1 patent drawing
  • US20250357257A1 patent drawing

AI summary

A device includes a semiconductor die bonded to an integrated circuit die, wherein the integrated circuit die includes a first interconnect structure that has a metal density of at least 50%, a first redistribution structure having a metal density of at least 50%, wherein the first interconnect structure is bonded to the first redistribution structure, and a composite heat dissipation material between a bottom surface of the first interconnect structure and a top surface of the first redistribution structure.