IC Package Vertical Interconnects for Wider Substrate Spacing
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Solution Overview
Problem
Existing IC packages face challenges in maintaining electrical integrity and pitch between substrates at increased distances due to the thickness of semiconductor dies, which affects thermal dissipation and interconnect reliability.
Innovation Solution
The use of a metal ball and metal pin combination as vertical interconnects in a mold layer between two substrates, allowing for increased distance without compromising pitch or risking electrical shorting, by aligning metal balls with metal pins through a common vertical axis and using compression or solder joints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the thickness of the die is increased to increase thermal dissipation, then thermal dissipation is improved, but the distance between substrates increases which compromises pitch and electrical integrity
Solution Approach 1:
The vertical interconnect is segmented into two parts: a metal ball portion and a metal pin portion. This segmentation allows the interconnect to span the increased distance between substrates while maintaining adequate pitch, as each segment can be optimized independently for its specific function and spacing requirements.
Solution Approach 2:
The vertical interconnect transitions from a single horizontal dimension (pitch) to two dimensions (vertical length and horizontal pitch) by incorporating both metal ball and metal pin portions. This dimensional change allows the interconnect to accommodate increased substrate distance without compromising pitch, as the vertical extent is now independently controllable.
2Temperature
If the distance between substrates is increased to support thicker dies, then thermal dissipation is improved, but the risk of electrical shorting between vertical interconnects increases
Solution Approach 1:
Dividing the vertical interconnect into metal ball and metal pin segments creates natural electrical isolation points between them. This segmentation reduces the risk of electrical shorting by breaking up the continuous conductive path and allowing for better spacing control in the mold layer.
Solution Approach 2:
The metal pin acts as an intermediary element between the metal ball and the substrate. This intermediary structure provides a controlled transition zone that maintains electrical integrity while accommodating the increased distance, thereby reducing shorting risk through proper isolation and spacing.
3Ease of manufacture
If traditional single-structure vertical interconnects are used at increased distances, then manufacturing is simpler, but pitch must be increased which reduces the number of interconnects
Solution Approach 1:
The segmented metal ball and metal pin structure allows for optimized pitch dimensions that would not be achievable with a single-structure interconnect. The separation into two elements enables tighter spacing while maintaining manufacturing feasibility through established ball and pin fabrication processes.
Solution Approach 2:
By changing the structural parameters from a single interconnect element to two distinct elements (ball and pin), the patent achieves tighter pitch dimensions. This parameter change allows for increased interconnect density while maintaining manufacturing simplicity through the use of standard ball and pin formation techniques.
Data Source
AI summary
Aspects disclosed include an integrated circuit (IC) package including two substrates and vertical interconnects coupling the two substrates, the vertical interconnects comprising a metal ball and metal pin combination to address an increased distance between substrates. The vertical interconnects are disposed in a mold layer between the two substrates. The mold layer also includes a die, a plurality of metal pins, and a plurality of metal balls coupled to the plurality of metal pins to form the vertical interconnects. Larger distances between the two substrates are desirable when a die's thickness is increased to increase thermal dissipation from the die. As an example, by utilizing a plurality of metal ball and pin combinations as vertical interconnects, larger distances between the two substrates may be advantageously achieved with reduced risk of electrical shorting between vertical interconnects and without compromising pitch between vertical interconnects.