IGBT Aging Detection via Multi-Point Case Temperature Monitoring
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Power semiconductor devices, such as IGBTs, in systems like wind turbines and electric vehicles face downtime due to aging-related failures, which are difficult to detect accurately with existing methods, leading to potential system failures.
Innovation Solution
A method for monitoring the aging of power semiconductor devices by measuring temperatures at multiple locations on the packaging case, using estimated junction temperature and case temperatures to calculate parameters indicative of aging processes, such as substrate solder and bond-wire degradation, allowing for real-time monitoring without interrupting system operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If temperature is monitored at a single location on the module surface, then the measurement system is simple, but the aging detection precision is insufficient
Solution Approach 1:
The patent divides the temperature measurement into multiple discrete locations on the module surface (first location and second location). By segmenting the measurement points, the system captures spatial temperature variations that indicate different aging processes, thereby improving detection precision without requiring complex internal sensors.
Solution Approach 2:
The patent transitions from single-point temperature measurement to multi-point surface temperature mapping. This dimensional expansion from 0D (single point) to 2D (surface distribution) enables detection of thermal patterns that reveal aging mechanisms, achieving higher precision through spatial resolution rather than through complex measurement equipment.
2Reliability
If junction temperature is directly measured, then the aging monitoring is accurate, but the system requires interruption of operation and complex internal access
Solution Approach 1:
The patent uses surface case temperature as an intermediary to indirectly monitor junction temperature and aging processes. Instead of directly accessing internal junctions (which would require system shutdown and disassembly), the method measures external case temperatures at multiple locations, which serve as mediators reflecting internal thermal and aging states, enabling continuous non-intrusive monitoring.
Solution Approach 2:
The patent replaces direct mechanical/access-based temperature measurement (requiring physical access to junctions) with thermal field-based indirect measurement. By substituting direct contact measurement with remote thermal sensing at the surface, the system maintains operational continuity while achieving aging monitoring through thermal pattern analysis rather than direct junction access.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate, remote monitoring of IGBT module aging, preventing failures by detecting changes in heat flow and power loss, thus extending device lifespan and maintaining system reliability.
Implementation Method 1
a module having a semiconductor switching device that generates heat during operation
Implementation Method 2
measuring a temperature at a first location on a surface of the module; measuring a temperature at a second location on the surface of the module
Data Source
AI summary
The aging of an electronic component in an electronic power converter can be monitored based on two or more case temperature measurements. A power electronic device is enclosed in a package having a baseplate, in which the power electronic device generates heat during operation and the baseplate transfers heat to a heat dissipating device or a cooling device. Sensors measure temperatures at first and second locations on a surface of the baseplate. A data processor calculates a value for a first parameter based on the temperatures at the first and second locations, in which the first parameter is indicative of an aging process of the power electronic device, and generates a first signal based on a comparison of the calculated value and a first predetermined threshold. The data processor calculates a value for a second parameter based on the first parameter value, a predetermined look-up table, and the temperatures at the first and second locations, in which the second parameter is indicative of another aging process of the semiconductor switching devices, and generates a second signal based on a comparison of the calculated value and a second predetermined threshold.