Weakened parallel cells fail first under real gate drive stress, enabling accurate trench gate failure prediction without extra sense elements.
Per-part aging data from in-die oscillators and error counters guides supply voltage adjustment to cut guardband power waste and protect yield.
Operational data, switching peaks, and KPIs feed a machine learning model to estimate power semiconductor lifetime under real thermal loads.
IDV-based aging measurements let each semiconductor adjust supply voltage, cutting guardband power loss and slowing wear.