IGBT Collector Contact Segmentation for Current Distribution
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Solution Overview
Problem
Developing lateral IGBTs with improved current and on-state breakdown voltage characteristics requires significant changes in element size, implantation layout, and impurity conditions, posing a development burden.
Innovation Solution
The semiconductor device features a collector conductive layer connected to a collector active region by a larger number of contacts than the emitter conductive layer connected to a base active region, allowing for distributed current and minority carrier implantation, thereby improving characteristics without large-scale changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If large-scaled changes are made in element size, implantation layout, and impurity implantation condition to improve IGBT characteristics, then current and on-state breakdown voltage characteristics are improved, but development burden increases significantly
Solution Approach 1:
The collector region is divided into multiple collector active regions, and the collector conductive layer is divided into multiple segments that respectively connect to different collector active regions. This segmentation allows independent optimization of each segment's contact configuration, reducing the complexity of overall device development while improving current distribution and on-state breakdown voltage characteristics
Solution Approach 2:
Different contact configurations are applied to different regions: the collector conductive layer uses multiple contacts per collector active region while the emitter conductive layer uses a different number of contacts per base active region. This local differentiation allows targeted optimization of current distribution without requiring global redesign of the entire device structure
2Reliability
If the number of collector contacts is increased to distribute current routes and minority carrier implantation, then current distribution and implantation distribution are improved, but device structure becomes more complex
Solution Approach 1:
The collector conductive layer is segmented into multiple independent contact regions, each connecting to a specific collector active region. This segmentation distributes current routes and minority carrier implantation across multiple localized paths, improving overall current distribution without requiring a complete redesign of the contact structure
Solution Approach 2:
The patent introduces asymmetry in the number of contacts between collector and emitter sides, creating a dimensional difference in contact configuration. The collector side uses more contacts per active region than the emitter side, utilizing this dimensional variation to achieve better current distribution while maintaining structural manageability
Data Source
AI summary
In a current-prioritized IGBT, a collector conductive layer is connected to one collector active region included in a collector region by a plurality of contacts. The number of contacts through which the collector conductive layer is connected to the one collector active region is larger than the number of contacts through which the emitter conductive layer is connected to one base active region included in a base region.