IGBT Overvoltage Protection Circuit with Logic Module

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing circuit arrangements for protecting units from overvoltages in supply networks do not effectively address transient overvoltage events without continuous higher-level control signals, and their response times are inadequate for fast voltage fluctuations.

Innovation Solution

A circuit arrangement featuring a logic module that detects overvoltage events and drives a power semiconductor with an increased gate voltage, utilizing a comparator to rapidly activate the power semiconductor and a thyristor for follow current limiting, with a microcontroller taking over control once activated, and additional TVS diodes for bridging response times and interference suppression.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a microcontroller is used to detect and respond to overvoltage events, then the control logic can be implemented, but the response time is too slow for fast transient events

Engineering Contradiction:
Improveovervoltage protection reliabilityVSAvoidresponse speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The control system is segmented into two independent parts: a fast comparator circuit for immediate detection and actuation, and a microcontroller for subsequent monitoring and analysis. The comparator operates autonomously during the critical initial response phase, bypassing the microcontroller's slower processing, while still enabling comprehensive protection functionality through division of labor between fast and intelligent components.

Inventive Principle:
Principle #1Segmentation

2Ease of operation

If the power semiconductor is driven with normal gate voltage, then continuous control signals are required, but this increases device complexity and prevents autonomous operation

Engineering Contradiction:
Improveautonomous operation capabilityVSAvoidcontrol signal requirement
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The protective circuit is designed to be self-activating through the comparator that continuously monitors the voltage and automatically triggers the power semiconductor when overvoltage is detected. The circuit serves itself by having the comparator generate the gate drive signal directly from the voltage condition, eliminating the need for external control systems to continuously monitor and command the protection mechanism.

Inventive Principle:
Principle #25Self-service

3Reliability

If the power semiconductor switching edge is not steep, then surge current capacity is insufficient, but increasing gate voltage increases power consumption

Engineering Contradiction:
Improvesurge current handling capabilityVSAvoidgate voltage power consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The high gate voltage is applied only periodically during transient overvoltage events rather than continuously. The comparator detects the overvoltage condition and activates the power semiconductor with enhanced gate drive only when needed, then returns to normal operation, thereby achieving surge current capability when required while minimizing average power consumption through event-driven operation.

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables efficient detection and management of transient overvoltage events with rapid response times, ensuring the power semiconductor can handle surge currents and limit follow currents effectively, even without continuous control signals, thereby protecting the unit from voltage spikes.

Implementation Method 1

A TVS diode is connected to the input of the unit against overvoltages, which is connected to the signal input of the microcontroller and the comparator that is also connected there and supplies a trigger signal in the event of breakdown.

Methodology Applied
Scientific EffectBreakdown: Avalanche Breakdown

Implementation Method 2

In order to enable the power semiconductor used to accept the required surge current, the invention ensures that the power semiconductor is driven with an increased gate voltage of up to 100 V and a correspondingly steep switching edge.

Methodology Applied
Scientific EffectSemiconductor switching:

Implementation Method 3

a thyristor is provided at the output terminals, quasi parallel to the power semiconductor, which is connected to the logic module, the logic module activating the thyristor in a time-coordinated manner for the purpose of limiting the follow current.

Methodology Applied
Scientific EffectThyristor conduction:

Data Source

PatentEP3332479B1Circuit assembly for protecting a unit to be operated from a supply network against overvoltage
Publication Date: 2022.01.05 DEHN SOHNE GMBH CO KG
  • EP3332479B1 patent drawingFigure 1
  • EP3332479B1 patent drawingFigure 2

AI summary

The invention relates to a circuit assembly for protecting a unit to be operated from a supply network against overvoltage, comprising an input having a first and a second input connection, which are connected to the supply network, an output A having a first and a second output connection, to which the unit to be protected can be connected, and a protection circuit, which is provided between the first and the second input connections in order to limit the voltage present at the first and the second input connections, wherein the protection circuit has a power semiconductor IGBT and a controller for the power semiconductor. According to the invention, the controller is designed as a driver that detects overvoltage events by means of a logic assembly LB and, in the case of an overvoltage event, activates the power semiconductor IGBT until the overvoltage event has subsided, and for this purpose the power semiconductor IGBT is controlled at an increased gate voltage of up to 100 V with a steep switching edge.