IGBT Semiconductor Layout With Isolated Temperature Sensing Diode
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Solution Overview
Problem
Insulated gate bipolar transistors (IGBTs) used in in-vehicle inverters generate significant heat due to high-speed switching, necessitating effective temperature management to maintain operational reliability.
Innovation Solution
Integration of a temperature sensing diode within the semiconductor device to monitor and manage temperature, accompanied by a protection diode to safeguard the temperature sensing diode, ensuring the IGBT operates within a safe temperature range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sensing diode is mounted on the switching element to detect temperature, then temperature detection capability is improved, but noise interference increases and detection accuracy deteriorates
Solution Approach 1:
The temperature sensing diode is extracted from the switching element structure and mounted separately on the substrate. This separation removes the noise interference source from the sensing element, allowing accurate temperature detection without the harmful electromagnetic noise that would be present if the diode were integrated within the switching element.
Solution Approach 2:
A dedicated temperature sensing region is introduced as an intermediary structure between the switching element and the temperature sensing diode. This intermediary region provides a clean electrical connection path that isolates the sensing diode from noise generated by the high-speed switching operations, enabling accurate temperature measurement.
2Productivity
If the area of main cells is increased to improve device performance, then productivity and power handling are improved, but device area increases
Solution Approach 1:
The patent utilizes vertical stacking in the third dimension by placing the temperature sensing diode and protection diode structures above the main cell region in a stacked configuration. This allows the main cells to expand horizontally for improved power handling while the sensing and protection functions are added vertically, avoiding increase in the device footprint area.
Solution Approach 2:
The substrate serves multiple functions simultaneously: it provides mechanical support for the main cells, acts as a mounting platform for the temperature sensing diode, and serves as a common reference potential structure. This multi-functionality allows increased main cell area for improved productivity without proportionally increasing the overall device area.
3Reliability
If a protection diode is added to protect the temperature sensing diode from surges, then reliability is improved, but device complexity increases
Solution Approach 1:
The protection diode is merged with the temperature sensing diode structure by connecting them in parallel between the temperature sensing region and the substrate. This combined configuration provides both temperature sensing and surge protection functions through a unified structural arrangement, reducing overall device complexity compared to separate independent structures.
Solution Approach 2:
The parallel connection of the protection diode with the temperature sensing diode creates a multi-functional structure where the same electrical path serves dual purposes: normal temperature sensing operation and surge protection during abnormal conditions. This eliminates the need for completely separate protection circuitry, maintaining simplicity while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effective temperature regulation enhances the operational reliability and longevity of IGBTs in in-vehicle inverters by preventing overheating.
Implementation Method 1
a temperature sensing diode configured to detect the temperature of the switching element
Implementation Method 2
the protection diode is connected in antiparallel to protect the temperature sensing diode from surges
Data Source
AI summary
This semiconductor device is provided with: a semiconductor layer; a cell that is provided on the semiconductor layer; an insulating film that covers the cell; a main electrode part that is superposed on the insulating film; a temperature-sensitive diode for sensing temperatures, the diode having a first electrode and a second electrode; and a connection electrode for diode, the connection electrode being used for the purpose of connecting the first electrode to the outside. The main electrode part has: a first bonding region to which a first conductive member is bonded; and a second bonding region to which a second conductive member is bonded. When viewed from the thickness direction of the semiconductor layer, the cell is provided on both a first semiconductor region in the semiconductor layer, and a second semiconductor region in the semiconductor layer.