Stacked Imaging Element Oxide Composition for Charge Transfer
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Solution Overview
Problem
Conventional stacked-type imaging elements face challenges in charge transfer efficiency due to complex production processes and lack of specific material composition details, particularly in the semiconductor layer, which affects the mobility and energy level correlation essential for charge transfer.
Innovation Solution
Incorporating an inorganic oxide semiconductor material layer with indium (In), gallium (Ga), tin (Sn), and zinc (Zn) atoms between the first electrode and the photoelectric conversion layer, optimizing the layer's composition and structure to enhance charge transfer characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor layer structure is used in stacked-type imaging elements, then the device complexity is reduced, but the charge transfer efficiency deteriorates due to insufficient mobility and energy level correlation
Solution Approach 1:
The patent applies composite materials by combining organic semiconductor materials with specific inorganic oxide semiconductor materials (such as IGZO: In-Ga-Zn-O) to form a hybrid semiconductor layer structure. This composite structure leverages the advantages of both material types to achieve high charge transfer efficiency while maintaining manageable device complexity. The inorganic oxide component provides high mobility and favorable energy levels, while the organic component enables solution processing and structural flexibility.
Solution Approach 2:
The patent employs parameter changes by systematically optimizing the composition ratios, film thicknesses, and energy level alignments of the semiconductor layer components. Specifically, it adjusts the metal atom ratios (In:Ga:Zn) in the inorganic oxide semiconductor material and controls the layer thickness to achieve optimal charge transfer characteristics. This parameter optimization enables high transfer efficiency without requiring overly complex device structures.
2Adaptability or versatility
If the photoelectric conversion layer uses organic semiconductor material for specific color sensitivity, then the adaptability of the imaging element is improved, but the charge transfer characteristics deteriorate due to lack of mobility optimization
Solution Approach 1:
The patent introduces an inorganic oxide semiconductor material layer as an intermediary between the organic photoelectric conversion layer and the charge storage electrode. This intermediary layer serves as a charge transport bridge, facilitating efficient charge transfer from the organic photoelectric conversion layer to the storage electrode. The inorganic oxide material's high mobility and appropriate energy level alignment enable it to mediate the charge transfer process effectively, overcoming the mobility limitations of organic semiconductors while preserving the color sensitivity advantages of the organic photoelectric conversion layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution simplifies the configuration while significantly improving charge transfer efficiency, reducing noise and enhancing image quality by ensuring complete depletion of the charge storage section, thus addressing the limitations of existing technologies.
Implementation Method 1
an inorganic oxide semiconductor material layer which includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms is formed between the first electrode and the photoelectric conversion layer
Implementation Method 2
signal charges generated in the photoelectric conversion layer based on photoelectric conversion
Data Source
AI summary
An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.