IGZO Pixel Electrode Connection Layout for Low-Resistance Displays
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Solution Overview
Problem
Display devices face defects due to contact resistance and reactivity between electrodes, which affect their reliability and performance.
Innovation Solution
A display device structure incorporating a pixel circuit layer with a semiconductor pattern and a conductive pattern made of indium gallium zinc oxide (IGZO), where the conductive pattern is doped and connected to the transistor electrodes to reduce contact resistance, and a display element layer with aligned electrodes to minimize reactivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrode connection structures are used, then device complexity is reduced, but contact resistance and reactivity between electrodes increase
Solution Approach 1:
The patent introduces a conductive pattern as an intermediary element between the transistor electrode and the pixel electrode. This conductive pattern serves as a mediator that facilitates electrical connection while reducing contact resistance and reactivity issues. The conductive pattern is specifically designed to bridge the connection gap and improve electrical contact reliability without requiring complex multi-layer structures.
Solution Approach 2:
The patent modifies the electrical parameters of the connection interface by changing the material composition and doping levels of the conductive pattern. By adjusting these parameters, the contact resistance is reduced and reactivity between electrodes is minimized, thereby improving overall electrical connection reliability without increasing structural complexity.
2Reliability
If direct electrode connection is used, then device complexity is minimized, but contact resistance increases
Solution Approach 1:
The conductive pattern acts as a mediator layer between directly connected electrodes, improving contact properties without significantly increasing structural complexity. The intermediary layer is integrated into the existing fabrication process and maintains a relatively simple overall structure while effectively reducing contact resistance.
3Reliability
If doped conductive pattern is used, then contact resistance is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent employs doping to change the electrical parameters of the conductive pattern, specifically increasing its conductivity and reducing contact resistance. The doping process is integrated into the existing semiconductor fabrication workflow, allowing for parameter optimization without requiring entirely new manufacturing processes.
Solution Approach 2:
The doping is applied locally to the conductive pattern in specific regions where contact resistance needs to be reduced. This localized treatment allows for manufacturing efficiency by focusing the doping process only where needed, rather than treating the entire structure uniformly.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces contact resistance and reactivity between electrodes, enhancing the reliability and performance of the display device by improving electrical connections and reducing defects.
Implementation Method 1
The conductive pattern may be at a same layer as the semiconductor pattern. The first transistor electrode may be connected to the second pixel electrode by the conductive pattern.
Implementation Method 2
The conductive pattern may be doped with a semiconductor material.
Data Source
AI summary
A display device including: a pixel circuit layer including a first transistor and a conductive pattern; and a display element layer on the pixel circuit layer, and including a light emitting element. The display element layer may further include: a first pixel electrode electrically connected to a first end of the light emitting element; and a second pixel electrode electrically connected to a second end of the light emitting element. The first transistor may include: a semiconductor pattern; a first gate insulating layer on the semiconductor pattern; a gate electrode on the first gate insulating layer; and a first transistor electrode and a second transistor electrode connected to the semiconductor pattern. The conductive pattern may be at a same layer as the semiconductor pattern. The first transistor electrode may be connected to the second pixel electrode by the conductive pattern.