OLED Display Panel IGZO Transistor Stability via Oxygen-Tuned Insulators
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Solution Overview
Problem
The poor stability of indium gallium zinc oxide (IGZO) transistors in OLED display panels affects the performance of driver and pixel circuits, leading to instability in the display panel's performance.
Innovation Solution
A display panel design featuring a first transistor with a silicon active layer and a second transistor with an oxide semiconductor active layer, where the oxygen concentration in the insulating layers is strategically adjusted to enhance the stability of the second transistor, preventing deficiencies and ensuring normal function.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If IGZO is used as the active layer material for the second transistor, then the leakage current is reduced, but the stability of the transistor deteriorates
Solution Approach 1:
The patent changes the oxygen concentration parameter in the insulating layers to improve transistor stability. Specifically, the first insulating layer has an oxygen concentration of 10-20 at%, while the second insulating layer has an oxygen concentration of 30-40 at%. This parameter adjustment prevents oxygen deficiency and maintains the normal function of the oxide semiconductor active layer, thereby resolving the stability issue while maintaining low leakage current characteristics.
Solution Approach 2:
The patent applies different oxygen concentrations to different insulating layers based on their specific functions and positions. The first insulating layer (closer to the active layer) has lower oxygen concentration (10-20 at%), while the second insulating layer (further from the active layer) has higher oxygen concentration (30-40 at%). This local differentiation optimizes both leakage current suppression and stability for each layer's specific role.
2Reliability
If the oxygen concentration in the first insulating layer is increased, then the stability of the second transistor is improved, but the second active layer may be affected by oxygen deficiency
Solution Approach 1:
The patent optimizes the oxygen concentration parameters in both insulating layers simultaneously. The first insulating layer is set to 10-20 at% oxygen concentration and the second insulating layer to 30-40 at%, creating a balanced oxygen distribution that improves transistor stability while preventing oxygen deficiency in the active layer through the gradient structure.
Solution Approach 2:
The patent introduces a gradient oxygen concentration structure where the first insulating layer acts as an intermediary between the second transistor and the second active layer. This intermediate layer with moderate oxygen concentration (10-20 at%) prevents direct oxygen deficiency issues while still improving stability, serving as a buffer zone.
Data Source
AI summary
Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor, where the first transistor and the second transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.