II-VI Semiconductor UV Filter for Optoelectronic Components
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Solution Overview
Problem
Existing optoelectronic semiconductor components face challenges in producing a simple and inexpensive solution to prevent UV radiation from damaging downstream materials, as they often require complex and costly filtering methods.
Innovation Solution
Incorporating a filter element made of II-VI compound semiconductor material, such as ZnMgSe, directly on the radiation passage face of a luminescent diode chip to absorb or reflect UV radiation, thereby protecting UV-sensitive materials and allowing blue light emission while maintaining a steep absorption edge across various temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional filtering methods are used to prevent UV radiation, then UV protection is achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent changes the material parameter of the filter element from conventional materials to II-VI compound semiconductor material, which inherently provides the desired UV filtering characteristics. This material substitution resolves the contradiction by achieving effective UV protection through the intrinsic properties of the semiconductor material rather than through complex multi-layer filtering structures.
Solution Approach 2:
The patent employs II-VI compound semiconductor material, which is a composite material class, to create the filter element. This composite material approach enables the filter to achieve both UV blocking and blue light transmission properties that would be difficult to obtain with single conventional materials, thereby simplifying the overall device structure while maintaining effective protection.
2Object-affected harmful factors
If conventional filtering methods are used to prevent UV radiation, then UV protection is achieved, but manufacturing cost increases
Solution Approach 1:
By changing the material parameter to II-VI compound semiconductor, the patent achieves UV filtering functionality that can be manufactured using established semiconductor fabrication processes. This material choice enables cost-effective production through standard semiconductor manufacturing techniques rather than requiring expensive specialized filtering components.
Solution Approach 2:
The II-VI compound semiconductor filter element serves multiple functions: UV filtering, blue light transmission, and potential integration with other semiconductor components. This multi-functionality reduces the need for separate filtering components, thereby lowering overall manufacturing costs and simplifying the production process.
3Reliability
If filter element blocks UV radiation, then UV-sensitive materials are protected, but some primary electromagnetic radiation intensity is lost
Solution Approach 1:
The filter element exhibits local quality in its optical properties, being highly absorbing in the UV range while remaining transparent in the blue light range. This wavelength-selective property allows the filter to protect UV-sensitive materials while minimizing energy loss in the useful blue light spectrum, thereby maintaining high radiation intensity for the desired wavelength range.
Solution Approach 2:
The filter element's optical characteristics are optimized to selectively interact with different wavelengths, effectively 'color-filtering' the radiation. It absorbs UV radiation (higher energy, shorter wavelength) while allowing blue light (lower energy, longer wavelength) to pass through, thus protecting materials while preserving the useful light output with minimal intensity loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces UV radiation exposure, extending the service life of optoelectronic semiconductor components and enabling the use of sensitive materials by filtering out harmful UV radiation with minimal intensity loss, particularly at high temperatures, and allowing for the use of materials that would otherwise degrade quickly.
Implementation Method 1
the filter element prevents passage of some of the primary electromagnetic radiation in the UV range
Implementation Method 2
the filter element consists of a II-VI compound semiconductor material... the filter element prevents passage of some of the primary electromagnetic radiation in the UV range
Data Source
AI summary
An optoelectronic semiconductor component includes a luminescent diode chip including a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation, and a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and the filter element consists of a II-VI compound semiconductor material.