Solid-State Devices TRIZ Cases

A through hole in the adhesion element constrains adhesive volume, preventing overflow and reducing panel breakage risk during assembly.

Continuous encapsulation over an LED array reduces display module thickness while enabling dynamic light mixing.

Calcium electron injection layer paired with composite electrode materials enhances charge carrier movement in organic light emitting elements.

An embedded copper metallic layer absorbs alpha rays from the wiring substrate, reducing semiconductor thickness while preventing SRAM soft errors.

A II-VI compound semiconductor filter element covers the radiation passage face of a luminescent diode chip to block ultraviolet light.

Stacking memory cells vertically while forming a selection transistor gate electrode simultaneously stabilizes resistor resistance and reduces device area.

A phosphoric acid overetch step reverses hydrolysis to dissolve colloidal silica deposits from high aspect ratio structures.

A fluorinated polymer buffer layer protects active organic materials during photolithographic processing.

Segmenting the III-V compound semiconductor channel with a wider bandgap material reduces source-to-drain leakage by two orders of magnitude.

SiC or SiCN films replace low-density materials to prevent mechanical damage during polishing of solid-state imaging apparatuses.

Integrated drive and current detection circuits manage semiconductor device voltage, preventing incorrect shutdowns from noise disturbances.

A voltage programming switch converts external DC signals into precise pulses for one-time programmable memory arrays.

A deposition mask uses stepped grooves to create varying thicknesses for precise organic layer patterning.

A ROM local extreme doping region creates a channel with large doping concentration difference.

A backside illuminated image sensor light-blocking pattern uses a tungsten damascene process to form a tapered structure.

Extending an anisotropic conductive protection film to the pad portion prevents moisture penetration while ensuring stable power supply to all pixels.

A support pattern with differential width penetrates stacked conductive and insulating layers, preventing warping and cracks in interlayer structures.

An organic molecular layer containing alkyl chains and hydroxy groups forms a high-quality block insulating layer via ALD, reducing leakage current.

Stacked silicon oxide and nitride films stabilize the top of element isolation regions in fin field effect transistors.

Extending conductor layers over guard rings reduces chip area and external charge susceptibility while maintaining breakdown voltage.

A single electrical pulse activates a selector and performs memory operations, eliminating dual-signal delays to reduce latency and power consumption.

Combining-type pad configuration with overlapping partial pads enhances sealing effectiveness.

A phase separation solvent enables self-phase separation of buffer and photoactive layers in organic solar cells.

Extraction of bulk semiconductor material enables higher device density and MEMS integration without modifying conventional processing equipment.

An intermediate layer generates dislocations to distribute defects in the active region of a nitride semiconductor light emitting diode.

Simultaneous processing of peripheral logic and array memory regions reduces fabrication complexity while maintaining optimized transistor performance.

A magnetic insertion layer between the insulating barrier and free layer enhances tunneling magnetoresistance in spin transfer torque random access memory devices.

Metal silicide portions in electrode films form conductive paths around semiconductor pillars, reducing resistance that limits operating speed.

A package structure uses non-metallic conductive posts within an insulating dielectric layer to provide electrical interconnects.

A mesh electrode structure reduces electromagnetic noise interference while maintaining high light transmittance for flexible displays.

Integrated LED design eliminates wire bonding defects by using barrier layers for reliable electrical connections.

A data processing device manages intermission driving states to reduce power consumption while maintaining display quality.

An insulating layer isolates the diode from the substrate, preventing parasitic transistor activation while reducing power consumption.

Segmented lower and upper plugs reduce aspect ratios, preventing bridge failures while maintaining alignment clearance.

A translucent U-shaped profile couples to a flexible LED substrate via adhesive, guiding light emission through its integrated structure.

A tandem light-emitting device structure uses a specific charge generation layer to improve charge balance and efficiency.

Segmented translucent electrodes reduce light absorption and improve power efficiency by resolving current spread uniformity issues.

A semiconductor light emitting device uses metal pillars covered by resin to protect the active layer and enhance mechanical strength.

Ion migration shifts effective electrode area to switch capacitance, simplifying capacitive random access memory manufacturing.

Matching layers bridge energy levels to inject charges directly into phosphorescent organic materials, resolving low conductivity bottlenecks.

Additives modify release layer absorption to enable clean device separation without damage.

Bridge electrodes intersect touch layers to create gaps that isolate residual metal, maintaining reliable touch functionality despite manufacturing defects.

Integrating touch sensors onto a display encapsulation unit eliminates separate attachment processes, reducing manufacturing complexity and cost.

Face-down mounting on a stretchable carrier merges thinning and singulation steps, eliminating transfers that increase process time and error risk.

A photodiode design uses periodic metallic patterns to excite surface plasmons and enhance light absorption.