Metal Silicide Electrode Films for Semiconductor Memory Speed
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Solution Overview
Problem
Current stacked-type semiconductor memory devices face challenges in increasing operating speed due to high resistance in electrode films, which hinders efficient data processing and storage.
Innovation Solution
The use of metal silicide portions surrounding semiconductor pillars in the electrode films reduces resistance by forming a conductive path, combined with a manufacturing process that alternately stacks silicon oxide and polysilicon films, and includes a silicidation step to create a silicide layer, enhancing the coupling ratio with floating gate electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional electrode films are used in stacked-type semiconductor memory devices, then the device structure can be maintained, but the operating speed is limited due to high resistance
Solution Approach 1:
The electrode film is constructed as a composite structure comprising a first electrode film layer and a second electrode film layer with different material compositions and resistance characteristics. This layered composite approach allows optimization of both conductivity and structural integrity, resolving the contradiction between operating speed and resistance by combining materials with complementary properties.
Solution Approach 2:
Different regions of the electrode film structure are assigned different material properties - the first electrode film layer has one set of characteristics while the second layer has another. This local differentiation enables the structure to simultaneously achieve low resistance for high-speed operation while maintaining the necessary structural framework for device stability.
2Reliability
If complex manufacturing processes are used to reduce resistance, then electrode film performance improves, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process performs preliminary actions by forming the first electrode film layer with specific characteristics before subsequent processing steps. This preparatory layering simplifies later manufacturing steps and reduces overall process complexity while achieving the desired resistance reduction through the pre-established structural framework.
Solution Approach 2:
The electrode film manufacturing is segmented into distinct stages - forming the first electrode film layer followed by the second electrode film layer. This segmentation allows each layer to be optimized independently with appropriate materials and processes, reducing the complexity of trying to achieve all properties in a single step while systematically building toward the final low-resistance structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the operating speed of semiconductor memory devices by reducing electrode film resistance and simplifies the manufacturing process, allowing for more efficient data storage and retrieval.
Implementation Method 1
a silicidation step to create a silicide layer
Data Source
AI summary
A semiconductor memory device according to an embodiment includes a stacked body in which an electrode film and an insulating film are alternately stacked along a first direction, a semiconductor member extending in the first direction and piercing the stacked body, and a charge storage member provided between the semiconductor member and the electrode film. The electrode film includes a first portion. The first portion is composed of a metal silicide. The first portion surrounds the semiconductor member as viewed from the first direction.