Wireless LED Structure with Barrier Layers

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Solution Overview

Problem

The conventional wire-bonding process for connecting light emitting diodes in series or parallel is prone to failures, leading to product defects and reduced production yields.

Innovation Solution

A light emitting diode structure is designed without wire-bonding, featuring a series connection configuration with a first and second contact electrode, insulating layers, barrier layers, and illuminant epitaxial structures, where the current flows through the epitaxial structures without the need for wire-bonding, using materials like chromium and platinum for the barrier layers to prevent metal diffusion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If wire-bonding process is used to connect light emitting diodes in series or parallel, then electrical connection between diodes is achieved, but product defects such as peeling and breaking occur, reducing reliability

Engineering Contradiction:
Improveconnection reliabilityVSAvoidpeeling and breaking defects
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent removes the wire-bonding process entirely from the connection method. Instead of using separate wire bonds to connect diodes, the invention integrates the connection function directly into the epitaxial structure through doped regions that provide both electrical connection and structural integrity, eliminating the source of peeling and breaking defects

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent combines the electrical connection function with the semiconductor epitaxial structure itself. The doped regions (such as N-type or P-type doped layers) serve dual purposes: providing electrical pathways for current flow between diodes and forming an integrated structural unit that prevents peeling and breaking

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If wire-bonding process is used to connect light emitting diodes, then electrical connection is achieved, but production yields decrease due to various product defects

Engineering Contradiction:
Improveproduction yieldVSAvoidconnection reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

By extracting the wire-bonding step from the manufacturing process, the patent eliminates the associated defects (peeling, breaking) that reduce production yield, while maintaining reliable electrical connection through the integrated doped region structure

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The doped epitaxial regions serve multiple functions simultaneously: electrical connection between diodes, structural support, and defect prevention. This multi-functionality reduces the number of separate components and processes needed, thereby improving production yield

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration avoids the risks associated with wire-bonding, improves production yields, and achieves good output power to meet consumer demands by ensuring smooth and uniform current flow through the diode structures.

Implementation Method 1

a first barrier layer, a second barrier layer... The first barrier layer is located on the second insulating layer and electrically connected to the second contact electrode. The second barrier layer is located on the second insulating layer... using materials like chromium and platinum for the barrier layers to prevent metal diffusion

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 2

a first illuminant epitaxial structure, and a second illuminant epitaxial structure... The first illuminant epitaxial structure is located on the second insulating layer and includes a first P-type semiconductor layer, a first light emitting layer, and a first N-type semiconductor layer

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS9252332B1Light emitting diode structure and light emitting diode module
Publication Date: 2016.02.02 ENNOSTAR CORP
  • US9252332B1 patent drawing
  • US9252332B1 patent drawing
  • US9252332B1 patent drawing

AI summary

A light emitting diode structure includes a first contact electrode, a first insulating layer, a second contact electrode, a second insulating layer, a first barrier layer, a second barrier layer, a first illuminant epitaxial structure, and a second illuminant epitaxial structure. The first contact electrode includes a first protruding portion. The first insulating layer covers the first contact electrode and exposes a top of the first protruding portion. The second contact electrode is located on the first insulating layer and includes a second protruding portion. The second insulating layer covers the second contact electrode and exposes a top of the second protruding portion. The first barrier layer is located on the second insulating layer and is electrically connected to the second contact electrode. The second barrier layer is located on the second insulating layer.