Semiconductor Release Layer Laser Ablation
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Solution Overview
Problem
Current methods for temporary wafer bonding and debonding in semiconductor device processing are inefficient, particularly in the use of release layers that do not effectively manage electromagnetic radiation absorption properties, leading to challenges in the separation of semiconductor devices from handling wafers without damaging the devices or the handling materials.
Innovation Solution
A method involving the application of a release layer with additives that adjust electromagnetic radiation absorption properties, followed by laser ablation to facilitate the separation of semiconductor devices from handling wafers, utilizing UV or IR lasers to ablate the release layer, allowing for clean and efficient removal of packaged semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional release layer is used for temporary wafer bonding, then the semiconductor devices can be processed on the handler, but the debonding process becomes difficult and may damage the devices or handler
Solution Approach 1:
The release layer's electromagnetic radiation absorption properties are modified by adding specific additives (dyes, pigments, or materials with high absorption at laser wavelengths) to make it vulnerable to laser ablation. This parameter change enables selective removal of the release layer through laser irradiation without damaging the semiconductor devices or handler, resolving the contradiction between reliable device retention and easy debonding
Solution Approach 2:
The mechanical debonding process is replaced with optical field-based laser ablation. Instead of applying mechanical force to separate the devices from the handler, a laser beam is used to selectively ablate the release layer, enabling damage-free separation through non-contact optical energy
2Manufacturing precision
If the release layer is made vulnerable to laser ablation by adding additives, then clean separation is achieved, but the absorption of electromagnetic radiation must be precisely controlled
Solution Approach 1:
The electromagnetic radiation absorption parameters of the release layer are precisely tuned by selecting specific additives with known absorption characteristics at the laser wavelength. This allows control over the ablation threshold and depth, achieving selective removal without affecting underlying layers or devices while managing the complexity through parameter optimization
Solution Approach 2:
The additives in the release layer act as intermediaries that absorb laser energy and convert it to thermal energy, which then drives the ablation process. This intermediary mechanism enables precise control over the ablation process by selecting materials with appropriate absorption coefficients and thermal properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and reliable debonding of semiconductor devices while maintaining the integrity of both the devices and the handling materials, supporting advanced semiconductor packaging processes by ensuring the release layer is vulnerable to laser radiation and thermally stable.
Implementation Method 1
The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer
Implementation Method 2
The release layer is ablated by irradiating the release layer through the handler with a laser
Data Source
AI summary
Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.