Voltage Programming Switch for OTP Memory
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Solution Overview
Problem
Current OTP memory programming systems are complex and costly due to the need for precise voltage and timing characteristics, making it difficult for customers to properly program OTP memory cells without specialized equipment, and they require additional circuitry and power consumption.
Innovation Solution
An integrated circuit with a voltage programming switch that converts an externally-generated DC voltage signal into a programming pulse signal, simplifying the programming process and reducing circuitry size and power consumption by eliminating the need for precise pulse generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If voltage pump circuitry is used to generate programming pulses, then precise voltage and timing characteristics can be achieved, but IC area and current consumption increase
Solution Approach 1:
The patent extracts the voltage pulse generation function from the IC by using an external voltage source connected through a programming switch. The switch is controlled by internal logic to connect the external voltage source to selected word lines during programming operations, eliminating the need for internal voltage pump circuitry while maintaining precise programming pulse characteristics.
Solution Approach 2:
The patent introduces a programming switch as an intermediary component between the external voltage source and the memory array. This switch acts as a mediator that enables precise voltage delivery to selected word lines without requiring complex internal voltage generation circuitry, thus reducing IC area while maintaining programming precision.
2Reliability
If external device provides programming pulses with precise characteristics, then programming reliability is improved, but customer equipment complexity and cost increase
Solution Approach 1:
The patent enables the IC to perform its own programming operation using a simple external voltage source and a controlled programming switch. The internal logic circuitry automatically manages the switching and timing, making the system self-sufficient for programming without requiring complex external pulse generation equipment from the customer.
3Device complexity
If CMOS and PROM components are integrated on a single die, then system complexity is reduced, but manufacturing complexity and cost increase
Solution Approach 1:
The patent segments the programming function into a simple switching mechanism that can be implemented using standard CMOS transistors. The programming switch uses CMOS transistors with appropriate oxide thickness to handle the high voltage required for programming, separating the high-voltage switching function from the low-voltage logic function while maintaining compatibility with standard CMOS manufacturing processes.
4Manufacturing precision
If programming pulse amplitude and width are precisely controlled, then programming accuracy is improved, but circuit complexity increases
Solution Approach 1:
The patent uses dynamic control of the programming switch to achieve precise programming pulse characteristics. The switch is controlled by timing signals from the logic circuitry that enable and disable the connection between the external voltage source and the word lines at precise moments, dynamically controlling pulse amplitude and width without requiring complex pulse generation circuitry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces programming complexity and power consumption, allowing for reliable OTP memory programming without the need for specialized equipment, making it easier for customers to program OTP memory cells and integrating OTP memory with CMOS circuits on a single die at lower costs.
Implementation Method 1
During programming, particular voltages are applied to selected transistors, which cause the gate oxide of those transistors to break down, thus programming the cell.
Data Source
AI summary
In one embodiment, the invention is an integrated circuit (IC) including an OTP memory and conditioning circuitry. The IC receives an externally-generated DC programming voltage signal that the conditioning circuitry transforms into a programming pulse signal for programming the OTP memory. The conditioning circuitry includes: (i) reset protection circuitry for holding the programming pulse signal low if the IC is powering up, (ii) an overvoltage protection circuit for substantially preventing the programming pulse voltage from exceeding predefined boundaries, and (iii) a conversion switch for controlling the programming pulse voltage. The programming pulse voltage is (i) substantially equivalent to the externally-generated DC voltage if an enable signal is on, and (ii) substantially equivalent to a reference voltage if the enable signal is off.