III-Nitride Monolithic Power Device with Integrated Schottky Rectifier
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Solution Overview
Problem
III-nitride power semiconductor devices face issues with energy storage and voltage spikes during switching, leading to potential device breakdown, and existing power supply circuits lack efficient reverse current conduction and voltage spike prevention.
Innovation Solution
A monolithic integrated III-nitride power device with a heterojunction structure, including a first and second III-nitride layer, power electrodes, a gate structure, and a Schottky electrode, designed for use in power supply circuits like boost circuits to function as a synchronous semiconductor rectifier, managing current and preventing voltage spikes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a III-nitride power device is used for switching current paths in power supply applications, then low on resistance and high breakdown voltage are achieved, but voltage spikes may drive the device voltage high enough causing breakdown
Solution Approach 1:
The patent merges a III-nitride power device with an antiparallel diode into a single monolithic integrated device. The power device includes a first III-nitride layer, a second III-nitride layer with different band gap, power electrodes, a gate structure, and a Schottky electrode in schottky contact with the second layer. This integration allows the device to function as both a switch and a protection element, preventing voltage spikes from causing breakdown while maintaining low on-resistance and high breakdown voltage characteristics.
2Reliability
If an antiparallel diode is added to conduct reverse current and prevent voltage spikes, then device protection is improved, but device complexity increases
Solution Approach 1:
The patent combines the power device and antiparallel diode into a single monolithic integrated structure fabricated on a common substrate. The heterojunction III-nitride body with different band gap layers enables both switching and rectification functions within one device, eliminating the need for separate discrete components while providing reverse current conduction and voltage spike protection.
3Power
If precise timing switching between two power switches is implemented, then energy storage and voltage control are improved, but control complexity increases
Solution Approach 1:
The monolithic integrated device provides self-protection capabilities through its inherent heterojunction structure and Schottky contact. The device automatically handles reverse current conduction and prevents voltage spikes without requiring complex external control circuits or precise timing synchronization, as the physical structure itself provides the protection mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively manages current switching and prevents voltage spikes, enhancing the reliability and efficiency of III-nitride power devices in power supply applications by allowing for precise control of the current path and reverse current conduction.
Implementation Method 1
a heterojunction III-nitride body having a first III-nitride layer, and a second III-nitride layer having a band gap different from that of the first III-nitride layer disposed over the first III-nitride layer
Implementation Method 2
a schottky electrode in schottky contact with the second III-nitride layer
Data Source
AI summary
A III-nitride power device that includes a Schottky electrode integrated with a power switch. The combination is used in power supply circuits such as a boost converter circuit.