III-V Semiconductor Cleaning Composition for Residue Removal
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Solution Overview
Problem
Current cleaning techniques for III-V microelectronic materials, particularly those of nanometer thickness, face challenges in removing residues, particles, and trace metals without etching the material or altering its stoichiometry, and are prone to metal re-plating due to the use of standard chemistries like SC1 and SC2, which also fail to integrate well into existing semiconductor processing designs.
Innovation Solution
A composition comprising an acid or base, a milder oxidizing agent than hydrogen peroxide, and a corrosion inhibitor, or a base other than ammonium hydroxide, is used to clean III-V microelectronic device materials, ensuring minimal etching and effective removal of contaminants while preventing metal re-plating and maintaining the material's stoichiometry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If standard cleaning chemistries (SC1, SC2) are used to remove contaminants from III-V materials, then residues and particles are removed, but metal re-plating occurs on the etched surface
Solution Approach 1:
The patent modifies the chemical parameters of standard SC1 and SC2 solutions by adjusting pH levels, oxidizing agent concentrations, and adding specific additives to prevent metal re-plating while maintaining cleaning effectiveness on III-V materials
Solution Approach 2:
The patent introduces intermediary substances such as chelating agents and corrosion inhibitors that mediate between the cleaning chemistry and metal contaminants, preventing metal re-plating by forming stable complexes with metal ions in the solution
2Manufacturing precision
If bulk etching is performed to clean III-V material surfaces, then contaminants are removed, but the etch rate is too high for nanometer-thick materials
Solution Approach 1:
The patent creates a cleaning solution with locally optimized properties where different components target specific contaminants while being selective to avoid etching the III-V material, achieving differential action on contaminants versus the substrate
Solution Approach 2:
The patent uses mild, partial etching action that is sufficient to remove contaminants but controlled to prevent excessive material loss, employing sub-stoichiometric amounts of etching agents
3Manufacturing precision
If hydrogen peroxide is used as oxidizing agent for cleaning, then oxidation of contaminants occurs, but etching of III-V material and stoichiometry change occur
Solution Approach 1:
The patent reduces the oxidizing power parameter by replacing hydrogen peroxide with milder oxidants or by controlling the concentration and activity of oxidizing agents to achieve contaminant oxidation without compromising III-V material stoichiometry
Solution Approach 2:
The patent employs periodic or controlled oxidation steps where mild oxidizing agents are applied in controlled cycles, allowing oxidation of contaminants while giving the III-V material time to remain stable and maintain stoichiometry
4Manufacturing precision
If annealing is used for cleaning III-V materials, then metal contamination is removed, but the process is expensive and not readily integratable into existing semiconductor processing
Solution Approach 1:
The patent replaces the thermal annealing process with a chemical cleaning solution approach, substituting a expensive, complex thermal process with a simpler, more cost-effective wet chemistry method that achieves similar metal contamination removal
Solution Approach 2:
The patent creates a universal cleaning solution that can replace multiple separate processes (annealing, SC1, SC2) with a single multi-functional chemistry that handles organic residues, metal contamination, and oxide removal in one step
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes post-ash residues and contaminants from III-V materials with minimal etching, reducing the etch rate to less than 1 Å and maintaining the material's integrity, thus preparing the surface for subsequent deposition processes while being cost-effective and integratable into existing semiconductor manufacturing processes.
Implementation Method 1
at least one oxidizing agent, wherein the at least one oxidizing agent comprises an oxidant that is milder than hydrogen peroxide
Implementation Method 2
comprising at least one acid, at least one base, at least one oxidizing agent, and water
Implementation Method 3
the liquid composition further comprises at least one corrosion inhibitor... Re-plating is a phenomenon that may occur because noble metals like Cu and Au have high oxidation potentials and are able to oxidize the III-V material
Data Source
AI summary
Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.