III-V Doped Layer Structure for Sheet Resistance Tuning
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Solution Overview
Problem
Current semiconductor device structures with group III-V layers face challenges in controlling sheet resistance and optimizing device performance due to uniformity issues in dopant concentrations across different portions of the doped group III-V layer.
Innovation Solution
The semiconductor device structure incorporates a doped group III-V layer with distinct portions having different concentrations of dopants, allowing for precise control of sheet resistance by varying the concentration of additional dopants such as magnesium, beryllium, zinc, and cadmium, and other elements like titanium, nickel, platinum, oxygen, or nitrogen, which affects the number of holes and electron depletion, thereby enhancing device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a uniform dopant concentration is used in the doped group III-V layer, then the manufacturing process is simple, but the sheet resistance control and device performance are insufficient
Solution Approach 1:
The doped group III-V layer is divided into multiple portions (first portion, second portion, third portion) with different dopant concentrations. The first portion has a first dopant concentration, the second portion has a second dopant concentration, and the third portion has a third dopant concentration. This local differentiation allows precise control of sheet resistance in different regions to optimize device performance while managing the complexity through a systematic multi-region approach.
2Reliability
If additional dopants are added to the group III-V layer, then the control over carrier concentration and resistance is improved, but the complexity of dopant management increases
Solution Approach 1:
The patent introduces additional dopants (such as magnesium, beryllium, zinc, or cadmium) into the group III-V layer to modify carrier concentration and control resistance characteristics. By changing the dopant type and concentration parameters in different portions of the layer, the device performance is optimized. The complexity is managed by systematically varying these parameters across different regions rather than uniformly throughout the entire layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved control over sheet resistance and device performance by creating regions with varying resistance levels, optimizing the electric field and threshold voltage, thus enhancing the overall efficiency and reliability of the semiconductor device.
Implementation Method 1
The doped group III-V layer includes a first portion and a second portion. The first portion has a first concentration of a first element. The second portion is adjacent to the first portion and has a second concentration of the first element. The first concentration of the first element is different from the second concentration of the first element.
Data Source
AI summary
A semiconductor device structure includes a substrate, a channel layer, a barrier layer and a doped group III-V layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The doped group III-V layer is disposed on the barrier layer. The doped group III-V layer includes a first portion and a second portion. The first portion has a first concentration of a first element. The second portion is adjacent to the first portion and has a second concentration of the first element. The gate structure is disposed on the first portion of the doped group III-V layer. The first concentration of the first element is different from the second concentration of the first element.